Method for forming a semiconductor package
Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.
1. A method of forming a semiconductor package comprising:
coupling a plurality of die to a non-electrically conductive layer;
coupling the non-electrically conductive layer to a metal sheet;
bonding a plurality of wires to a first side of each die;
bonding the plurality of wires to the metal sheet;
applying a mold compound over each die and the plurality of wires;
exposing an end of each wire of the plurality of wires and the non-electrically conductive layer through removing the metal sheet; and
singulating the mold compound to form a plurality of semiconductor packages;
wherein each semiconductor package of the plurality of semiconductor packages comprises a portion of the non-electrically conductive layer.
2. The method of claim 1 , wherein singulating the mold compound comprises sawing through the mold compound.
3. The method of claim 1 , further comprising coupling an electrical contact to each exposed end of each wire.
4. The method of claim 1 , wherein the semiconductor package does not comprise a lead frame.
5. The method of claim 3 , wherein an electrical contact comprises one of a bump, a stud, or a pad.
6. A method of forming a semiconductor package comprising:
coupling a plurality of die to a non-electrically conductive layer;
coupling the non-electrically conductive layer to a metal sheet;
bonding a plurality of wires to a first side of each die;
bonding the plurality of wires to the metal sheet;
applying a mold compound over each die and the plurality of wires;
exposing an end of each wire of the plurality of wires and the non-electrically conductive layer through separating the metal sheet; and
singulating the mold compound to form a plurality of semiconductor packages.
7. The method of claim 6 , wherein singulating the mold compound comprises sawing through the mold compound.
8. The method of claim 6 , further comprising coupling an electrical contact to each exposed end of each wire.
9. The method of claim 6 , wherein the semiconductor package does not comprise a lead frame.
10. The method of claim 8 , wherein an electrical contact comprises one of a bump, a stud, or a pad.
11. A method of forming a semiconductor package comprising:
coupling a plurality of die to a metal sheet, each die coupled to a layer between the die and the metal sheet;
bonding a plurality of wires to a first side of each die opposing the layer and bonding the plurality of wires to the metal sheet;
applying a mold compound over each die and the plurality of wires;
exposing an end of each wire of the plurality of wires through removing the metal sheet; and
singulating the mold compound to form a plurality of semiconductor packages;
wherein the layer comprised in each semiconductor package of the plurality of semiconductor packages is exposed through the mold compound.
12. The method of claim 11 , wherein removing the metal sheet comprises peeling away the metal sheet.
13. The method of claim 11 , further comprising forming a solder pad over each exposed end of each wire.
14. The method of claim 13 , wherein forming a solder pad over each exposed end of each wire comprises printing a solder pad.
15. The method of claim 11 , wherein the non-electrically conductive layer is a die flag.
16. The method of claim 11 , wherein the semiconductor package does not comprise a lead frame.