IMAGING SYSTEMS WITH IMPROVED MICROLENSES FOR ENHANCED NEAR-INFRARED DETECTION
An imaging device may have an array of image sensor pixels that includes infrared pixels. The infrared pixels may be formed from a silicon layer and having an etched microlens on an upper surface of the silicon layer. The etched microlens may be formed as concentric circles, concentric squares, or other concentric shapes to improve the focusing of incident light on the photosensitive portion of the silicon layer. Additionally, there may be a plurality of silicon—silicon-oxide interfaces or silicon—silicon-nitride interfaces between the etched microlens and the silicon layer. These interfaces may increase the absorption of infrared light by the underlying silicon layer. Similar interfaces may be formed on a lower surface, either as an etched region or as an additional dielectric layer. Alternatively or additionally, the infrared pixels may include a conductive patch between the silicon layer and microlens that similarly increases the absorption of infrared light.
1 . An image sensor pixel configured to generate charge in response to incident light, the image sensor pixel comprising:
a semiconductor layer having opposing first and second surfaces, wherein the incident light passes through the first surface;
an etched microlens on the first surface of the semiconductor layer, wherein the etched microlens and semiconductor layer have at least one silicon—silicon-oxide interface; and
an interlayer dielectric on the second surface of the semiconductor layer.
2 . The image sensor pixel defined in claim 1 wherein the at least one silicon—silicon-oxide interface is configured to promote absorption of high-wavelength light within the semiconductor layer and wherein the interlayer dielectric has trenches that extend toward the second surface.
3 . The image sensor pixel defined in claim 2 wherein the etched microlens comprises concentric ring-shaped portions that are configured to direct the light toward a central portion of the semiconductor layer.
4 . The image sensor pixel defined in claim 3 wherein the concentric ring-shaped portions are trenches in the first surface.
5 . The image sensor pixel defined in claim 4 wherein the trenches comprise first trenches and second trenches, wherein the first trenches are closer to the central portion of the semiconductor layer than the second trenches, and wherein the first trenches are shallower than the second trenches.
6 . The image sensor pixel defined in claim 5 wherein the first trenches have a higher refractive index than the second trenches.
7 . The image sensor pixel defined in claim 2 wherein the etched microlens comprises concentric square-shaped portions that are configured to direct the light toward a central portion of the semiconductor layer.
8 . The image sensor pixel defined in claim 2 wherein the etched microlens comprises concentric ring-shaped portions and additional edge portions, and wherein the ring-shaped portions and the additional edge portions are configured to direct the light toward a central portion of the semiconductor layer.
9 . The image sensor pixel defined in claim 1 wherein the interlayer dielectric is formed from a dielectric material selected from the group consisting of: silicon nitride and silicon oxide.
10 . The image sensor pixel defined in claim 1 wherein a combined height of the semiconductor layer, the etched microlens, and the interlayer dielectric is less than 5 microns.
11 . The image sensor pixel defined in claim 1 further comprising an optical stack formed over the etched microlens, wherein the optical stack includes one or more of a color filter, a planarization layer, and an antireflection layer.
12 . An infrared-light sensitive image sensor pixel comprising:
a silicon layer having opposing first and second surfaces;
an infrared-light-absorption-promotion structure on the first surface; and
a dielectric layer on the second surface having trenches that extend toward the second surface of the silicon layer.
13 . The infrared-light sensitive image sensor pixel defined in claim 12 wherein the infrared-light-absorption-promotion structure is an etched microlens.
14 . The infrared-light sensitive image sensor pixel defined in claim 13 wherein the etched microlens and the silicon layer have at least one silicon—silicon-oxide interface that enhances infrared light absorption.
15 . The infrared-light sensitive image sensor pixel defined in claim 12 wherein the infrared-light-absorption-promotion structure is a conductive patch, the infrared-light sensitive image sensor pixel further comprising:
a microlens that focuses incident light on the silicon layer, wherein the conductive patch is interposed between the microlens and the silicon layer.
16 . The infrared-light sensitive image sensor pixel defined in claim 15 wherein the conductive patch is formed from a conductive material selected from the group consisting of: tungsten, WSi, nickel, and NiSi.
17 . The infrared light-sensitive image sensor pixel defined in claim 16 further comprising a silicon-oxide interfacial layer interposed between the silicon layer and the conductive patch.
18 . The infrared light-sensitive image sensor pixel defined in claim 15 wherein the microlens is formed from a material selected from the group consisting of: acrylic, glass, and polymer.
19 . An image sensor pixel comprising:
a silicon layer having a first surface and an opposing second surface;
an etched microlens on the first surface, wherein the etched microlens has a first plurality of trenches that extend into the first surface, and wherein the etched microlens is configured to increase the absorption of infrared light by the silicon layer; and
a dielectric layer on the second surface, wherein the dielectric layer has a second plurality of trenches that extend into the second surface.
20 . The image sensor pixel defined in claim 19 wherein the etched microlens and silicon layer have a selected one of silicon—silicon-oxide interfaces and silicon—silicon-nitride interfaces.