MICROLENS DEVICE AND RELATED METHODS
Implementations of semiconductor devices may include: a microlens array formed of a plurality of microlenses. Each of the plurality of microlenses may have a first side and a second side. A layer of polymer may be formed over the second side of each of the plurality of microlenses and a low index box may be between adjacent microlenses of the plurality of microlenses.
1 . A semiconductor device comprising:
a microlens array formed of a plurality of microlenses, each of the plurality of microlenses having a first side and a second side;
a layer of polymer formed over the second side of each of the plurality of microlenses; and
a low index box between adjacent microlenses of the plurality of microlenses.
2 . The semiconductor device of claim 1 , wherein the polymer is a fluoropolymer.
3 . The semiconductor device of claim 1 , wherein the layer of polymer has a widest dimension of 250 nanometers.
4 . The semiconductor device of claim 1 , further comprising a filter array (CFA) in a box (CIAB) or a composite grid (CG) coupled with the first side of the microlens array.
5 . The semiconductor device of claim 4 , wherein the CIAB comprises a material having a refractive index of 1.46.
6 . The semiconductor of claim 1 , wherein the low index box has a refractive index of 1.39.
7 . The semiconductor of claim 1 , wherein the low index box has a widest dimension of 150 nanometers.
8 . The semiconductor of claim 1 , wherein the microlens array is formed of a material having a refractive index of 1.6 to 1.8.
9 . A semiconductor device comprising:
a microlens array formed of a plurality of microlenses, each of the plurality of microlenses having a first side and a second side;
a layer of polymer formed over the second side of each of the plurality of microlenses; and
one or more air gaps in a portion of the layer of polymer between adjacent microlenses of the plurality of microlenses.
10 . The semiconductor device of claim 9 , wherein the one or more air gaps are positioned in a low index box between each of the plurality of microlenses.
11 . The semiconductor device of claim 9 , wherein the polymer is a fluoropolymer.
12 . The semiconductor device of claim 9 , wherein the one or more air gaps have a longest dimension of 400 nanometers.
13 . The semiconductor device of claim 9 , further comprising one of a color filter array (CFA) in a box (CIAB) or a composite grid (CG) coupled to a first side of the microlens array.
14 . The semiconductor device of claim 9 , the CIAB comprises a material having a refractive index of 1.46.
15 . A method of forming a semiconductor device, the method comprising:
providing a semiconductor wafer, the semiconductor wafer comprising a first side and a second side;
forming a planar layer on the second side of the semiconductor wafer;
forming a photoresist layer on the planar layer;
forming a microlens array in the planar layer; and
coupling a polymer over and between each of a microlens of the microlens array.
16 . The method of claim 15 , wherein coupling a polymer over and between each of the microlenses further comprises forming one or more air gaps in a portion of the layer of polymer surrounding each of the plurality of microlenses.
17 . The method of claim 16 , wherein the one or more air gaps have a longest dimension of 400 nanometers.
18 . The method of claim 15 , wherein the polymer comprises a low refractive index of 1.39.
19 . The method of claim 15 , further comprising coupling a color filter array to the second side of the semiconductor wafer before forming the planar wafer.
20 . The method of claim 15 , further comprising forming a box in a portion of the layer of polymer surrounding each of the plurality of microlenses, the box comprising a widest dimension of 150 nanometers.