Semiconductor package stress balance structures and related methods
Implementations of a semiconductor package may include a semiconductor die including a first side and a second side where the first side of the semiconductor die includes one or more electrical contacts; a layer of metal coupled to the second side of the semiconductor; and a stress balance structure coupled to one of the layer of metal or around the one or more electrical contacts.
1. A semiconductor package, comprising:
a semiconductor die comprising a first side and a second side, the first side of the semiconductor die comprising one or more electrical contacts;
a layer of metal coupled directly to the second side of the semiconductor die; and
only a single stress balance structure coupled directly to and around the one or more electrical contacts,
wherein the single stress balance structure is a continuously formed structure;
wherein the semiconductor die comprises a thickness between 0.1 microns and 125 microns; and
wherein the single stress balance structure is directly coupled to only the semiconductor die at the first side and a plurality of sidewalls.
2. The package of claim 1 , wherein the single stress balance structure coupled around the one or more electrical contacts comprises an organic material covering at least the first side of the semiconductor die wherein the one or more electrical contacts extend through one or more openings in the organic material.
3. The package of claim 2 , wherein the one or more electrical contacts comprise at least two metal-containing layers.
4. The package of claim 2 , wherein the organic material is a mold compound.
5. The package of claim 1 , wherein the single stress balance structure alone is configured to reduce a warpage of the semiconductor die.
6. The package of claim 1 , wherein a width of the semiconductor die is greater than a width of the layer of metal.
7. A semiconductor package, comprising:
a semiconductor die comprising a first side and a second side, the first side of the semiconductor die comprising one or more electrical contacts;
a layer of metal directly coupled to the second side of the semiconductor die; and
a stress balance structure coupled directly to and around the one or more electrical contacts and directly coupled to the first side of the semiconductor die and a plurality of sidewalls of the semiconductor die between the first side and the second side;
wherein the second side of the semiconductor die is coplanar with an outer surface of the stress balance structure;
wherein the semiconductor die comprises a thickness between 0.1 microns and 125 microns; and
wherein a width of the semiconductor die is greater than a width of the layer of metal.
8. The package of claim 7 , wherein the stress balance structure coupled around the one or more electrical contacts comprises an organic material covering at least the first side of the semiconductor die wherein the one or more electrical contacts extend through one or more openings in the organic material.
9. The package of claim 7 , wherein the one or more electrical contacts comprise at least two metal-containing layers.
10. The package of claim 8 , wherein the organic material is a mold compound.
11. The package of claim 7 , wherein the package comprises a single stress balance structure.
12. The package of claim 11 , wherein the single stress balance structure is a continuously formed structure.