Semiconductor package with wettable flank
Implementations of the semiconductor package may include a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall. Implementations of the semiconductor package may include a first lead and a second lead extending from the first sidewall and a first half-etched tie bar directly coupled to the first lead. An end of the first half-etched tie bar may be exposed on the third sidewall of the semiconductor package. Implementations of the semiconductor package may also include a second half-etched tie bar directly coupled to the second lead. An end of the second half-etched tie bar may be exposed on the fourth sidewall. An end of the first lead and an end of the second lead may each be electroplated. The first die flag and the second die flag may be electrically isolated from the first lead and the second lead.
1. A semiconductor package comprising:
a first surface opposite a second surface;
a first sidewall opposite a second sidewall, the first sidewall and second sidewall coupled between the first surface and the second surface;
a third sidewall opposite a fourth sidewall, the third sidewall and fourth sidewall coupled between the first surface and the second surface;
a first lead and a second lead extending from the first sidewall;
a first half-etched tie bar directly coupled to the first lead, wherein an end of the first half-etched tie bar is exposed on the third sidewall;
a second half-etched tie bar directly coupled to the second lead, wherein an end of the second half-etched tie bar is exposed on the fourth sidewall;
a first die flag;
a second die flag; and
a mold compound at least partially encapsulating the first lead, the second lead, the first half-etched tie bar, the second half-etched tie bar, the first die flag, and the second die flag;
wherein an end of the first lead and an end of the second lead are each electroplated; and
wherein the first die flag and the second die flag are electrically isolated from the first lead and the second lead.
2. The semiconductor package of claim 1 , wherein the mold compound is between the first surface and the first half-etched tie bar, the first surface and the second half-etched tie bar, the second surface and the first half-etched tie bar, and the second surface and the second half-etched tie bar.
3. The semiconductor package of claim 1 , further comprising a third lead and a fourth lead extending from the first sidewall.
4. The semiconductor package of claim 3 , further comprising a third half-etched tie bar directly coupled to the third lead and a fourth half-etched tie bar directly coupled to the fourth lead, wherein an end of the third half-etched tie bar is exposed on the third side of the semiconductor package and an end of the fourth half-etched tie bar is exposed on the fourth side of the semiconductor package.
5. The semiconductor package of claim 3 , further comprising a trench extending into the first surface, wherein the trench separates the first lead, the second lead, the third lead, and the fourth lead from the first die flag and the second die flag.
6. The semiconductor package of claim 5 , wherein an end of a third half-etched tie bar and an end of a fourth half-etched tie bar are exposed on a sidewall of the trench.
7. The semiconductor package of claim 1 , wherein the first half-etched tie bar and the second half-etched tie bar are used to electroplate the first lead and the second lead.
8. The semiconductor package of claim 1 , wherein each electroplated end of the first lead and the second lead extend from the first sidewall at least 8 micrometers.