Lateral micro-LED
A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.
1. A lateral micro-light emitting diode (micro-LED) comprising:
a first semiconductor layer;
an active region on the first semiconductor layer, the active region including one or more quantum well layers configured to emit light;
a p-type semiconductor region on a first lateral region of the active region;
an n-type semiconductor region on a second lateral region of the active region, wherein the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region, and wherein the p-type semiconductor region is surrounded by the n-type semiconductor region; and
an isolation region between the p-type semiconductor region and the n-type semiconductor region, the isolation region including a dielectric region, an air gap, or an undoped semiconductor region.
2. The lateral micro-LED of claim 1 , wherein a lateral size of the active region is less than 10 μm.
3. The lateral micro-LED of claim 1 , wherein the isolation region is characterized by a width less than 250 nm.
4. The lateral micro-LED of claim 1 , wherein the one or more quantum well layers are configured to emit red light.
5. The lateral micro-LED of claim 4 , wherein the one or more quantum well layers include InGaP layers, each of the InGaP layers characterized by a thickness less than 10 nm.
6. The lateral micro-LED of claim 1 , wherein the first semiconductor layer includes a cladding layer that is undoped or lightly p-doped.
7. The lateral micro-LED of claim 1 , wherein the one or more quantum well layers include 4 or more quantum well layers.
8. The lateral micro-LED of claim 1 , wherein:
the active region includes a top barrier layer characterized by a thickness higher than other barrier layers in the active region;
the top barrier layer is adjacent to the p-type semiconductor region and the n-type semiconductor region; and
the top barrier layer is undoped or unintentional doped.
9. A lateral micro-light emitting diode (micro-LED) comprising:
a substrate;
a cladding layer on the substrate;
an active region on the cladding layer, the active region including one or more quantum well layers configured to emit light;
a p-type semiconductor region on a first lateral region of the active region;
an undoped or unintentionally doped semiconductor region on a second lateral region of the active region and adjacent the p-type semiconductor region; and
an n-contact region formed in a peripheral region of the undoped or unintentionally doped semiconductor region, a peripheral region of the active region, or both.
10. The lateral micro-LED of claim 9 , wherein a lateral size of the lateral micro-LED is less than 10 μm.
11. The lateral micro-LED of claim 9 , wherein the p-type semiconductor region is on a center region of the active region and is surrounded by the undoped or unintentionally doped semiconductor region.
12. The lateral micro-LED of claim 9 , wherein the one or more quantum well layers include InGaP layers, each of the InGaP layers characterized by a thickness less than 10 nm.
13. The lateral micro-LED of claim 9 , wherein:
the p-type semiconductor region and the undoped or unintentionally doped semiconductor region are formed in a same epitaxial layer; and
the p-type semiconductor region includes a p-type dopant diffused in the epitaxial layer.
14. The lateral micro-LED of claim 9 , wherein the n-contact region includes a metal layer that alloys with the peripheral region of the undoped or unintentionally doped semiconductor region, the peripheral region of the active region, or both.