Method and system for non-destructive metrology of thin layers
A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.
1. A method for determining at least one property of an integrated circuit (IC) comprising a structure, the method comprises:
illuminating the structure with an x-ray beam, during an execution of a measurement selected out an x-ray photoelectron spectroscopy (XPS) measurement and an x-ray fluorescence spectroscopy (XRF) measurement; wherein the structure comprises a layer on top of an underlayer; wherein the layer has an uneven topography and comprises a layer top surface, layer sidewalls that are not parallel to the layer top surface, and a layer bottom surface; wherein the underlayer has an uneven topography and comprises an underlayer top surface, underlayer layer sidewalls that are not parallel to the underlayer top surface and an underlayer bottom surface;
detecting layer emitted photoelectrons and underlayer emitted photoelectrons; wherein the detected layer emitted photoelectrons comprise photoelectrons emitted from the layer top surface and photoelectrons emitted from the layer sidewalls; wherein the detected underlayer emitted photoelectrons comprise photoelectrons emitted from the underlayer top surface and photoelectrons emitted from the underlayer sidewalls;
determining a layer intensity function for the layer emitted photoelectrons, wherein the layer intensity function is responsive to photoelectrons emitted from the layer top surface, to photoelectrons emitted from the layer sidewalls, to photoelectrons emitted from the layer bottom surface and to layer coefficients that accommodate for the uneven topography of the layer; wherein the determining of the layer intensity function is based, at least in part, on one or more optical critical dimension (OCD) measurement obtained dimensions of the structure;
determining an underlayer intensity function for the underlayer emitted photoelectrons, wherein the underlayer intensity function is responsive to photoelectrons emitted from the underlayer top surface, to photoelectrons emitted from the underlayer sidewalls, to photoelectrons emitted from the underlayer bottom surface, and to underlayer coefficients that accommodate for the uneven topography of the underlayer;
calculating a ratio between the layer intensity function and the underlayer intensity function; and
determining a thickness of the layer based on the ratio.
2. The method according to claim 1 wherein the determining is executed in an iterative manner.
3. The method according to claim 1 , wherein the layer coefficients are indicative of differences in relative strengths between detected photoelectrons that were emitted from the layer top surface, detected photoelectrons that were emitted from the layer sidewalls and detected photoelectrons that were emitted from the layer bottom.
4. The method according to claim 1 , wherein the layer coefficients comprise a layer top surface coefficient, a layer sidewalls coefficient and a layer bottom surface coefficient, wherein the underlayer coefficients comprise an underlayer top surface coefficient, an underlayer sidewalls coefficient and an underlayer bottom surface coefficient.
5. The method according to claim 4 wherein the layer comprises multiple repetitions of the layer top surface, the layer sidewalls and the layer bottom surface; and wherein at least one of the layer coefficients is responsive to a pitch of the multiple repetitions.
6. The method according to claim 5 , wherein the layer sidewall coefficient is proportional to p/(square root{h 2 +0.25*(BCD−TCD) 2 ), wherein h is a height layer sidewall, TCD is a top critical dimension and BCD is a bottom critical dimension.
7. The method according to claim 1 wherein the obtaining of the layer coefficients comprises calculating at least one of the layer coefficient based, at least in part, on the one or more OCD measurement obtained dimensions of the structure.
8. The method according to claim 7 comprising performing one or more OCD measurements to obtain the OCD measurement obtained dimensions of the structure.
9. The method according to claim 1 comprising using the thickness of the layer during one or more additional OCD measurements to impose constraints on OCD-extracted topography determined based on the one or more additional OCD measurements.
10. The method according to claim 1 comprising constraining one or more additional XPS measurements by the OCD-extracted topography.
11. A system for determining at least one property of an integrated circuit (IC) comprising a structure, the system comprises:
optics configured to (i) illuminate the structure with an x-ray beam, during an execution of a measurement selected out an x-ray photoelectron spectroscopy (XPS) measurement and an x-ray fluorescence spectroscopy (XRF) measurement; wherein the structure comprises a layer on top of an underlayer; wherein the layer has an uneven topography and comprises a layer top surface, layer sidewalls that are not parallel to the underlayer top surface and a layer bottom surface; wherein the underlayer has an uneven topography and comprises an underlayer top surface, underlayer layer sidewalls that are not parallel to the underlayer top surface, and an underlayer bottom surface, and to (ii) detect layer emitted photoelectrons and underlayer emitted photoelectrons; wherein the detected layer emitted photoelectrons comprise photoelectrons emitted from the layer top surface and photoelectrons emitted from the layer sidewalls; wherein the detected underlayer emitted photoelectrons comprise photoelectrons emitted from the underlayer top surface and photoelectrons emitted from the underlayer sidewalls;
a processor that is configured to:
determine a layer intensity function for the layer emitted photoelectrons, wherein the layer intensity function is responsive to photoelectrons emitted from the layer top surface, to photoelectrons emitted from the layer sidewalls, to photoelectrons emitted from the layer bottom surface and to layer coefficients that accommodate for the uneven topography of the layer; wherein the determining of the layer intensity function is based, at least in part, on one or more optical critical dimension (OCD) measurement obtained dimensions of the structure;
determine an underlayer intensity function for the underlayer emitted photoelectrons, wherein the underlayer intensity function is responsive to photoelectrons emitted from the underlayer top surface, to photoelectrons emitted from the underlayer sidewalls, to photoelectrons emitted from the underlayer bottom surface and to underlayer coefficients that accommodate for the uneven topography of the underlayer;
calculate a ratio between the layer intensity function and the underlayer intensity function; and
determine a thickness of the layer based on the ratio.
12. The system according to claim 11 , wherein the processor is configured to determine in an iterative manner.
13. The system according to claim 11 , wherein the layer coefficients are indicative of differences in relative strengths between detected photoelectrons that were emitted from the layer top surface, detected photoelectrons that were emitted from the layer sidewalls and detected photoelectrons that were emitted from the layer bottom.
14. The system according to claim 13 , wherein the layer comprises multiple repetitions of the layer top surface, the layer sidewalls and the layer bottom surface; and wherein at least one of the layer coefficients is responsive to a pitch of the multiple repetitions.
15. The system according to claim 14 , wherein the layer sidewall coefficient is proportional to p/(square root{h 2 +0.25*(BCD−TCD) 2 ), wherein h is a height layer sidewall, TCD is a top critical dimension and BCD is a bottom critical dimension.
16. The system according to claim 13 wherein the processor is configured to obtain the layer topography coefficients by calculating at least one of the layer coefficient based, at least in part, on the one or more OCD measurement obtained dimensions of the structure.
17. The system according to claim 16 wherein the optics is configured to perform one or more OCD measurements to obtain the one or more OCD measurement obtained dimensions of the structure.
18. The system according to claim 11 , wherein the layer coefficients comprise a layer top surface coefficient, a layer sidewalls coefficient and a layer bottom surface coefficient; wherein the underlayer coefficients comprise an underlayer top surface coefficient, an underlayer sidewalls coefficient and an underlayer bottom surface coefficient.
19. The system according to claim 11 , wherein the processor is configured to use the thickness of the layer during one or more additional OCD measurements to impose constraints on OCD-extracted topography determined based on the one or more additional OCD measurements.
20. The system according to claim 19 wherein the processor is configured to constrain one or more additional XPS measurements by the OCD-extracted topography.