SINGLE-PHOTON AVALANCHE DIODE COVERED BY MULTIPLE MICROLENSES
An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.
1 . A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
first microlenses that overlap the single-photon avalanche diode, wherein each one of the first microlenses has a first size; and
second microlenses that overlap the single-photon avalanche diode, wherein each one of the second microlenses has a second size that is different than the first size.
2 . The semiconductor device defined in claim 1 , wherein the second size is greater than the first size and wherein the second microlenses overlap a periphery of the single-photon avalanche diode.
3 . The semiconductor device defined in claim 2 , wherein the second microlenses are cylindrical microlenses.
4 . The semiconductor device defined in claim 2 , wherein the second microlenses are spherical microlenses.
5 . The semiconductor device defined in claim 1 , wherein the second size is greater than the first size and wherein the second microlenses extend in a ring around the first microlenses.
6 . The semiconductor device defined in claim 1 , further comprising:
light scattering structures formed in a surface of the substrate.
7 . The semiconductor device defined in claim 6 , wherein each one of the first microlenses is aligned with a respective one of the light scattering structures.
8 . The semiconductor device defined in claim 6 , wherein each one of the first microlenses has a first width, wherein each one of the light scattering structures has a second width, and wherein the first width is within 20% of the second width.
9 . The semiconductor device defined in claim 6 , wherein the first microlenses are spaced with a first pitch, wherein the light scattering structures are spaced with a second pitch, and wherein the first pitch is within 20% of the second pitch.
10 . The semiconductor device defined in claim 1 , further comprising:
at least one isolation structure that is formed around the single-photon avalanche diode.
11 . The semiconductor device defined in claim 10 , wherein each one of the second microlenses at least partially overlaps the at least one isolation structure.
12 . An imaging system comprising:
a semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
at least one isolation structure formed around the single-photon avalanche diode;
first microlenses that overlap a central portion of the single-photon avalanche diode, wherein each one of the first microlenses has a first size; and
second microlenses that at least partially overlap the single-photon avalanche diode and that at least partially overlap the at least one isolation structure, wherein each one of the second microlenses has a second size that is greater than the first size.
13 . The imaging system defined in claim 12 , wherein the second microlenses are cylindrical microlenses.
14 . The imaging system defined in claim 12 , wherein the second microlenses are spherical microlenses.
15 . The imaging system defined in claim 12 , wherein the semiconductor device further comprises:
light scattering structures formed in a surface of the substrate.
16 . The imaging system defined in claim 15 , wherein each one of the first microlenses is aligned with a respective one of the light scattering structures.
17 . The imaging system defined in claim 12 , wherein the imaging system is an imaging system for a vehicle.
18 . A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
at least one isolation structure that is formed in the substrate around the single-photon avalanche diode; and
an array of microlenses that overlaps the single-photon avalanche diode and that at least partially overlaps the at least one isolation structure.
19 . The semiconductor device defined in claim 18 , wherein the array of microlenses includes at least five rows and at least five columns.
20 . The semiconductor device defined in claim 18 , further comprising:
light scattering structures comprising trenches in the substrate, wherein the light scattering structures overlap the single-photon avalanche diode and wherein the array of microlenses overlaps the light scattering structures.