Magnet structure for back-biased sensors
According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.
1. A magnetic field sensor comprising:
three or more magnetic field sensing elements spaced apart from each other in a direction along a first axis, each of the three or more magnetic field sensing elements comprising at least two segments; and
a magnet structure to provide a bias magnetic field about the three or more magnetic field sensing elements, the magnet structure including a plurality of layers attached together that alternate between magnetic layers and non-magnetic layers in the direction along the first axis, at least two of the magnetic layers having a first width and at least one of the magnetic layers having a second width different than the first width,
wherein a first segment of the at least two segments of each of the three or more magnetic field sensing elements is positioned above a central axis of the magnet structure and a second segment of the at least two segments of each of the three or more magnetic field sensing elements is positioned below the central axis of the magnet structure.
2. The magnetic field sensor of claim 1 , wherein the magnet structure includes three magnetic layers and two non-magnetic layers.
3. The magnetic field sensor of claim 1 , wherein the magnet structure has a dimension defined by dimensions of individual ones of the magnetic layers and dimensions of individual ones of the non-magnetic layers.
4. The magnetic field sensor of claim 1 , wherein the magnet structure has a parallelepiped shape.
5. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements include one or more magnetoresistance (MR) elements.
6. The magnetic field sensor of claim 5 , wherein the three or more magnetic field sensing elements includes three magnetoresistance (MR) elements.
7. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements include one or more Hall effect elements.
8. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements are enclosed with a packaging configured for attachment of the magnet structure.
9. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements are positioned with respect to the magnetic layers such that a strength of the bias magnetic field is substantially the same for each of the three or more magnetic field sensing elements.
10. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements are equally spaced from one another along the first axis.
11. The magnetic field sensor of claim 1 , wherein a total number of magnetic layers in the magnet structure is equal to a total number of magnetic field sensing elements in the magnetic field sensor.
12. The magnetic field sensor of claim 2 , wherein widths of the three magnetic layers correspond to dimensions of the three or more magnetic field sensing elements.
13. The magnetic field sensor of claim 1 , wherein widths of the non-magnetic layers are selected to correspond to a spacing between the magnetic field sensing elements.
14. The magnetic field sensor of claim 1 , wherein the three or more magnetic field sensing elements comprise bridge constructions that subject the three or more magnetic field sensing elements to different biases.
15. A magnetic field sensor comprising:
three or more magnetic field sensing elements spaced apart from each other in a direction along a first axis; and
a magnet structure to provide a bias magnetic field about the three or more magnetic field sensing elements, the magnet structure including a plurality of layers attached together that alternate between magnetic layers and non-magnetic layers in the direction along the first axis, the magnet structure including at least three magnetic layers,
wherein the three or more magnetic field sensing elements are positioned with respect to the magnetic layers such that a strength of the bias magnetic field is substantially the same for each of the three or more magnetic field sensing elements, and
wherein the three or more magnetic field sensing elements are positioned with respect to the magnetic layers such that each of the three or more magnetic field sensing elements is aligned with a respective one of the at least three magnetic layers along the first axis.
16. The magnetic field sensor of claim 15 , wherein the magnet structure comprises at least two non-magnetic layers.
17. The magnetic field sensor of claim 15 , wherein the three or more magnetic field sensing elements comprise three magnetoresistance (MR) elements.
18. The magnetic field sensor of claim 15 , wherein the three or more magnetic field sensing elements are enclosed with a packaging configured for attachment of the magnet structure.
19. The magnetic field sensor of claim 16 , wherein at least two of the at least three magnetic layers have a first width and at least one of the at least three magnetic layers has a second width different than the first width.