Snapback electrostatic discharge protection device with tunable parameters
In one aspect, a diode includes a substrate having a first type dopant; a buried layer having a second type dopant and formed within the substrate; an epitaxial layer having the second type dopant and formed above the buried layer; and a plurality of regions having the first type dopant within the epitaxial layer. The plurality of regions includes a first region, a second region, and a third region. The diode also includes a base well having the first type dopant and located within the epitaxial layer and in contact with the third and fourth regions. In a reverse-bias mode, the diode is an electrostatic discharge (ESD) clamp and forms parasitic transistors comprising a first bipolar junction transistor (BJT), a second BJT and a third BJT.
1. A diode comprising:
a substrate having a first type dopant;
a buried layer having a second type dopant and formed within the substrate;
an epitaxial layer having the second type dopant and formed above the buried layer;
a plurality of regions having the first type dopant within the epitaxial layer, wherein the plurality of regions comprises a first region, a second region, a third region, and a fourth region;
a base well having the first type dopant and located within the epitaxial layer and in contact with the third and fourth regions;
a first well having the second type dopant and formed in the epitaxial layer;
a second well having the first type dopant, and formed in the epitaxial layer, the second well extending into the first region;
a third well having the first type dopant located in the epitaxial layer and connected to the base well and connected to the second region and to the fourth region;
an anode;
a first heavily doped region having the second type dopant connected to the anode and the base well;
a second heavily doped region having the second type dopant connected to the anode and the base well; and
a cathode,
wherein in a reverse-bias mode, the diode is an electrostatic discharge (ESD) clamp and forms parasitic transistors comprising a first bipolar junction transistor (BJT), a second BJT and a third BJT.
2. The diode of claim 1 , wherein the first BJT comprises:
an emitter formed by the second well and the first region;
a base formed by the epitaxial layer and the buried layer; and
a collector formed by the base well, the second region and the third well.
3. The diode of claim 2 , wherein the second BJT comprises:
an emitter formed by the first and second heavily doped regions;
a base formed by the base well and the third region; and
a collector formed by the epitaxial layer and the buried layer.
4. The diode of claim 3 , wherein the third BJT comprises:
an emitter formed by the first and second heavily doped regions and the fourth region;
a base formed by the base well, the fourth region and the third well; and
a collector formed by the epitaxial layer and the first well.
5. The diode of claim 1 , wherein the second BJT comprises:
an emitter formed by the first and second heavily doped region;
a base formed by the base well and the third region; and
a collector formed by the epitaxial layer and the buried layer.
6. The diode of claim 1 , wherein the third BJT comprises:
an emitter formed by the first and second heavily doped regions and the fourth region;
a base formed by the base well, the fourth region and the third well; and
a collector formed by the epitaxial layer and the first well.
7. The diode of claim 1 , wherein the first type dopant is a p-type dopant, and the second type dopant is an n-type dopant.
8. The diode of claim 1 , wherein the cathode is a ring-shaped cathode.
9. The diode of claim 1 , wherein the second region is ring-shaped region.
10. The diode of claim 1 , wherein the first well is a ring-shaped well.
11. The diode of claim 1 , wherein the third well is a ring-shaped well.
12. The diode of claim 1 , further comprising a plug,
wherein the plug is in direct contact with the first well and the buried layer.
13. The diode of claim 1 , further comprising:
a first heavily doped region of the first type dopant connected to the anode, the base well and the first heavily doped region of the second type dopant; and
a second heavily doped region of the first type dopant connected to the anode, the base well and the second heavily doped region of the second type dopant.
14. The diode of claim 1 , further comprising:
a third heavily doped region having the first type dopant connected to the anode and the base well; and
a fourth heavily doped region of the first type dopant connected to the anode and the base well.
15. The diode of claim 1 , wherein changing a thickness of the epitaxial layer changes one or more of breakdown current, holding voltage and/or trigger voltage of the diode.
16. The diode of claim 1 , wherein changing one or more of a doping concentration of the base well, thickness of the base well and extension of the base well with respect to the anode changes one or more of breakdown current, holding voltage and/or trigger voltage of the diode.
17. The diode of claim 1 , wherein the diode is a reduced injection diode.