Integrated analysis devices and related fabrication methods and analysis techniques
Provided are integrated analysis devices having features of macroscale and nanoscale dimensions, and devices that have reduced background signals and that reduce quenching of fluorophores disposed within the devices. Related methods of manufacturing these devices and of using these devices are also provided.
1. A method of fabricating an analysis device, comprising:
bonding a first substrate and a second substrate,
the bonding giving rise to an enclosed conduit disposed between the substrates, the enclosed conduit being capable of transporting a fluid therethrough,
wherein the enclosed conduit comprises a first front-end branched channel region and a nanochannel analysis region,
wherein the first front-end branched channel region comprises at least a primary channel characterized as having a cross-sectional dimension of from about 10 nm to about 10,000 nm and at least two secondary channels downstream and divided from the primary channel, wherein the total cross-sectional area of the at least two secondary channels is approximately equal to the cross-sectional area of the primary channel, thus maintaining an approximately constant flow rate wherein the ratio of the cross-sectional dimensions of the primary channel to the at least two secondary channels is in the range of 100 to 10,000, wherein the first front-end branched channel region comprises stacked array of channels having progressively reduced cross sectional dimensions, wherein the channels are connected by one to five levels of forks.
2. The method of claim 1 , wherein the bonding comprises anodic bonding, thermal bonding, or any combination thereof.
3. The method of claim 1 , wherein the first substrate, the second substrate, or both, comprises a dielectric and/or a semiconductor.
4. The method of claim 1 , wherein the first substrate, the second substrate, or both, comprises silicon, SiGe, Ge, strained silicon, GeSbTe, AlGaAs, AlGaInP, AlGaN, AlGaP, GaAsP, GaAs, GaN, GaP, InAlAs, InAlP, InSb, GaInAlAs, GaInAlN, GaInAsN, GaInAsP, GaInAs, GaInN, GaInP, GaSb, InN, InP, CdSe, CdTe, zinc selenide (ZnSe), HgCdTe, ZnO, ZnTe, zinc sulfide (ZnS), aluminum, aluminum oxide, stainless steel, Kapton™, metal, ceramic, plastic, polymer, sapphire, silicon carbide, silicon on insulator (SOI), astrosital, barium borate, barium fluoride, sillenite crystals BGO/BSO/BTO, bismuth germanate, calcite, calcium fluoride, cesium iodide, FelLiNbQ 3 , fused quartz, quartz, fused silica, glass, SiO 2 , gallium, gadolinium garnet, potassium dihydrogen phosphate (KDP), KRS-5, potassium titanyl phosphate, lead molibdate, lithium fluoride, lithium iodate, lithium niobate, lithium tantalate, magnesium fluoride, potassium bromide, titanium dioxide, sodium chloride, tellurium dioxide, zinc selenide, spin-on glass, UV curable materials, soda lime glass, any compound above in an hydrogenated form, stoichiometric variations thereof, or any combination thereof.
5. The method of claim 1 , wherein the first substrate comprises a thickness of about 10 nm to about 10,000 nm.
6. The method of claim 1 , wherein the first front-end branched channel region comprises a splitter structure dividing the primary channel into at least two secondary channels.
7. The method of claim 6 , wherein the splitter structure comprises at least one surface angled in the range of from about 0 and about 90 degrees relative to the centerline of the primary channel.
8. The method of claim 6 , wherein each of the secondary channel is divided into two tertiary channels by a splitter comprising at least one surface angled in the range of from about 0 and about 90 degrees relative to the centerline of the secondary channel.
9. The method of claim 6 , wherein the splitter is configured so as to define an overhang that shields at least a portion of the secondary channel from the primary channel.
10. The method of claim 9 , wherein the overhang is about 5% to about 50% of the width of the secondary channel.
11. The method of claim 6 , wherein the splitter structure comprises a contoured portion.
12. The method of claim 11 , wherein the splitter structure is configured such that a fluid borne body propelled through the primary channel by a gradient is essentially equally likely to enter either secondary channel downstream from the splitter structure.
13. The method of claim 1 , wherein the width of each secondary channel is about 30% to about 70% of the width of the primary channel.
14. The method of claim 1 , wherein the length of a secondary channel is about 1 micron to about 500 microns.
15. The method of claim 1 , wherein at least one of the plurality of nanochannels comprises a varying width, a varying depth, or both.
16. The method of claim 1 , wherein the length of each of the plurality of nanochannels is from about 50 microns to about 5000 microns.
17. The method of claim 1 , further comprising disposing a thin film atop at least a portion of the first substrate, the second substrate, or both, the film enhancing bonding between the substrates.
18. The method of claim 17 , wherein the thin film electrically insulates at least a portion of the interior of the enclosed conduit from at least one of the substrates.
19. The method of claim 17 , wherein the thin film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride, SiOxNy, hydrogenated silicon dioxide, hydrogenated silicon nitride, hydrogenated silicon oxynitride, high K dielectrics, TiSiO, TiO, TiN, titanium oxides, hydrogenatedtitanium oxides, titanium nitrides, hydrogenated titanium nitrides, TaO, TaSiO, TaOxNy, Ta 2 O 5 , TaCN, tantalum oxides, hydrogenated tantalum oxides, tantalum nitrides, hydrogenated tantalum nitrides, HfO 2 , HfSiO 2 , HfZrOx, HfN, HfON, HfSiN, HfSiON, hafnium oxides, hydrogenated hafnium oxides, hafnium nitrides, hydrogenated hafnium nitrides, ZrO 2 , ZrSiO 2 , ZrN, ZrSiN, ZrON, ZrSiON, zirconium oxides, hydrogenated zirconium oxides, zirconium nitrides, hydrogenated zirconium nitrides, Al 2 O 3 , AlN, TiAlN, TaAlN, WAlN, aluminum oxides, hydrogenated aluminum oxides, aluminum nitrides, hydrogenated aluminum nitrides, SiN, WN, low K dielectrics, fluorine doped silicon dioxide, carbon doped silicon dioxide, porous silicon dioxide, porous carbon doped silicon dioxide, spin-on organic polymeric dielectrics, graphite, graphene, carbon nano-tubes, plastics, polymer, organic molecules, self-assembled monolayers, self-assembled multi-layers, a lipid bi-layer, any of the aforementioned compounds in a hydrogenated form, a stoichiometric variation of any of the foregoing, and any combination thereof.
20. A method of fabricating an analysis device, comprising:
bonding a first substrate and a second substrate,
the bonding giving rise to an enclosed conduit disposed between the substrates, the enclosed conduit being capable of transporting a fluid therethrough,
wherein the enclosed conduit comprises a first front-end branched channel region and a nanochannel analysis region,
wherein the first front-end branched channel region comprises at least a primary channel characterized as having a cross-sectional dimension of from about 10 nm to about 10,000 nm and at least two secondary channels downstream and divided from the primary channel, wherein the total cross-sectional area of the at least two secondary channels is approximately equal to the cross-sectional area of the primary channel, thus maintaining an approximately constant flow rate wherein the ratio of the cross-sectional dimensions of the primary channel to the at least two secondary channels is in the range of 100 to 10,000, wherein the first front-end branched channel region comprises five stacked arrays of channels having progressively reduced cross sectional dimensions, wherein the channels are connected by five levels of forks.