Magnetic field current sensor to reduce stray magnetic fields
In one aspect, a magnetic field current sensor includes an annihilation detector. The annihilation detector includes an annihilation bridge that includes magnetoresistance elements. The annihilation detector also includes a current bridge that includes at least two of the magnetoresistance elements, a first comparator configured to compare an output signal from the annihilation bridge and a second comparator configured to compare an output signal from the current bridge. An output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators.
1. A magnetic field current sensor comprising:
an annihilation detector comprising:
an annihilation bridge comprising magnetoresistance elements;
a current bridge comprising at least two of the magnetoresistance elements;
a first comparator configured to compare an output signal from the annihilation bridge; and
a second comparator configured to compare an output signal from the current bridge; and
an OR circuit configured to receive an output signal from the first comparator and an output signal from the second comparator, the OR circuit configured to provide the output signal of the annihilation detector indicating whether or not a current sensor is operating in a linear range,
wherein an output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators, wherein the magnetoresistance elements comprise a first tunneling magnetoresistance (TMR) element, a second TMR element, a third TMR element, and a fourth TMR element, each comprising a free layer forming a magnetic disk and having a reference direction in a first direction wherein the first TMR is formed in a first pillar having a first diameter, the second TMR element is formed in a second pillar having the first diameter, the third TMR element is formed in a third pillar having a second diameter larger different from the first diameter, and the fourth TMR element is formed in a fourth pillar having the second diameter, wherein the first diameter is smaller than the second diameter, wherein the first TMR element, the second TMR element, the third TMR element and the fourth TMR element are on top of a one-turn conductor, wherein the first TMR element and the third TMR element are on top of one end of the conductor,
wherein the second TMR element and the fourth TMR element are on top of the other end of the conductor, wherein a first bridge comprises the first TMR element and the second TMR element forming a first leg of the first bridge with the first TMR element electrically closer in series to a first current source than the second TMR element,
wherein the first bridge further comprises the first TMR element and the second TMR element forming a second leg of the first bridge with the second TMR element electrically closer in series to the first current source than the first TMR element,
wherein a second bridge comprises the third TMR element and the fourth TMR element forming a first leg of the second bridge with the third TMR element electrically closer in series to a second current source than the fourth TMR element,
wherein the second bridge further comprises the third TMR element and the fourth TMR element forming a second leg of the second bridge with the fourth TMR element electrically closer in series to the second current source than the third TMR element,
wherein one of the first bridge or the second bridge is the annihilation bridge.
2. The magnetic field current sensor of claim 1 , wherein a distance between the first TMR element and the third TMR element is about 20 microns, and
wherein a distance between the first TMR element and the second TMR element is about 400 microns.
3. The magnetic field current sensor of claim 1 , wherein the other one of the first bridge or the second bridge is the current bridge.
4. The magnetic field current sensor of claim 1 , wherein the first TMR element is part of a first leg of the annihilation bridge,
wherein the second TMR element is part of a second leg of the annihilation bridge,
wherein the third TMR element is part of the first leg of the annihilation bridge, and
wherein the fourth TMR element is part of the second leg of the annihilation bridge.
5. The magnetic field current sensor of claim 4 , wherein the first TMR element and second TMR element are on top of a one-turn conductor.
6. The magnetic field current sensor of claim 1 , wherein the first TMR element, the second TMR element, the third TMR element and the fourth TMR element are on top of a one-turn conductor.
7. The magnetic field current sensor of claim 6 , wherein the first TMR element and the fourth TMR element are on top of one end of the conductor,
wherein the second TMR element and the third TMR element are on top of the other end of the conductor.
8. The magnetic field current sensor of claim 7 , wherein the first TMR element and the third TMR element are on a first axis,
wherein the second TMR element and the fourth TMR element are on a second axis,
wherein the first axis is parallel to the second axis.
9. A magnetic field current sensor comprising:
an annihilation detector comprising:
an annihilation bridge comprising magnetoresistance elements;
a current bridge comprising at least two of the magnetoresistance elements;
a first comparator configured to compare an output signal from the annihilation bridge; and
a second comparator configured to compare an output signal from the current bridge; and
an OR circuit configured to receive an output signal from the first comparator and an output signal from the second comparator, the OR circuit configured to provide the output signal of the annihilation detector indicating whether or not a current sensor is operating in a linear range,
wherein an output of the annihilation detector indicates whether an annihilation exists in one or more of the magnetoresistance elements using at least one of the outputs signals of the first and second comparators, wherein the magnetoresistance elements comprise a first tunneling magnetoresistance (TMR) element, a second TMR element, a third TMR element, and a fourth TMR element, each comprising a free layer forming a magnetic disk, wherein the first TMR element, the second TMR element, the third TMR element and the fourth TMR element are on top of a one-turn conductor, wherein the first TMR element and the fourth TMR element are on top of one end of the conductor,
wherein the second TMR element and the third TMR element are on top of the other end of the conductor, wherein the first TMR element and the third TMR element are on a first axis,
wherein the second TMR element and the fourth TMR element are on a second axis,
wherein the first axis is parallel to the second axis,
wherein, on the first leg, the first TMR element is electrically closer in series to a first current source than the second TMR element, the second TMR element is electrically closer in series to the first current source than the third TMR element, and the third TMR element is electrically closer in series to the first current source than the fourth TMR element,
wherein, on the second leg, the third TMR element is electrically closer in series to the first current source than the fourth TMR element, the fourth TMR element is electrically closer in series to the first current source than the first TMR element, and the first TMR element is electrically closer in series to the first current source than the second TMR element,
wherein the first bridge is one of the annihilation bridge or the current bridge.