Granted Patent B2

US 12,257,644 · App. 17/897,905 · Granted Mar 25, 2025

Inventor: Paul J. L. Webster (Kingston, CA)

Assignee: IPG Photonics Corporation

B23K26/032B23K9/00B23K10/02B23K15/0046B23K26/0643B23K26/0648B23K26/082B23K26/14B23K26/244B23K31/125G01B5/0037G01B9/0209G01B11/22G01B11/2441G01N21/954G01S7/4817G01S17/89B26F1/26B26F3/004

Abstract

Claims (28)

1. A system comprising:

a material processing laser source configured to generate a material processing beam that is applied to a sample location in a material modification process and creates a phase change region (PCR) in a material of the sample, wherein the material modification process includes a keyhole welding process and the PCR includes a keyhole;

an imaging system configured to produce an imaging beam;

an interferometer having a reference arm configured such that a first component of the imaging beam applied to an input of the reference arm results in an output signal of the reference arm, a sample arm configured such that a second component of the imaging beam applied to the sample arm results in an output signal of the sample arm, at least a component of the output signal of the sample arm including reflections of the component of the imaging beam from the sample location, a combiner configured to combine the output signal of the reference arm and the output signal of the sample arm to produce a combined signal as an interferometry output, and

a signal detector configured to produce an interferogram from the interferometry output;

a deflection element configured to control a direction of the imaging beam; and

a controller coupled to the deflection element and configured to control the deflection element such that

alignment of the imaging beam relative to a feature of the PCR is maintained, wherein the feature of the PCR is substantially a bottom surface of the keyhole of the PCR, and

a center of the imaging beam is directed to lag behind the material processing beam in a direction that is related to a velocity direction of the material processing beam relative to the sample location.

2. The system of claim 1 , wherein the controller is further configured to determine an optimal lag between the imaging beam and the material processing beam.

3. The system of claim 1 , wherein the material modification process includes a change in at least one of velocity magnitude and the velocity direction of the material processing beam relative to the sample location.

4. The system of claim 1 , wherein maintaining the alignment includes comparing the reflections of the component of the imaging beam from the sample location to a threshold.

5. The system of claim 1 , wherein maintaining the alignment comprises detecting a misalignment of the imaging beam relative to the feature of the PCR.

6. The system of claim 5 , wherein the misalignment is caused by misalignment in a laser head configured to apply the material processing beam and the imaging beam to the sample location.

7. The system of claim 6 , wherein the misalignment in the laser head is caused by changes to one or more optics contained in the laser head.

8. The system of claim 5 , wherein the controller is configured to detect the misalignment based on a component of the interferometry output.

9. The system of claim 1 , wherein the controller is further configured to determine at least one characteristic of the PCR based on the interferometry output.

10. The system of claim 9 , wherein the at least one characteristic of the PCR comprises at least one of: keyhole depth, location of maximum keyhole depth, average depth, location, width, length, surface shape, subsurface shape, subsurface keyhole length, subsurface profile, subsurface keyhole width, wall slope, sidewall angle, collapse, instability, dynamics of liquid region of the PCR, and location of interface between liquid and solid region.

11. The system of claim 1 , wherein the controller is coupled to the interferometer and is configured to control the deflection element based on the interferometer output.

12. A method comprising:

applying a material processing beam to a sample location in a material modification process and creating a phase change region (PCR) in a material of the sample, wherein the material modification process includes a keyhole welding process and the PCR includes a keyhole;

applying an imaging beam to the sample location; and

deflecting the imaging beam such that

the imaging beam maintains alignment relative to a feature of the PCR, wherein the feature of the PCR is substantially a bottom surface of a keyhole of the PCR, and

a center of the imaging beam is directed to lag behind the material processing beam in a direction that is related to a velocity direction of the material processing beam relative to the sample location.

13. The method of claim 12 , further comprising determining an optimal lag between the imaging beam and the material processing beam.

14. The method of claim 12 , further comprising detecting a misalignment of the imaging beam relative to the feature of the PCR.

15. The method of claim 14 , wherein the misalignment is caused by misalignment in a laser head configured to apply the material processing beam and the imaging beam to the sample location.

Continuity (6)

References Cited (151)