Yttrium oxide-based sintered body and semiconductor production system member
An yttrium oxide-based sintered body contains yttrium oxide as a main constituent and 0.1 wt % or more and 5.0 wt % or less of zirconium on a ZrO 2 basis. Such an yttrium oxide-based sintered body made with yttrium oxide and a certain amount of zirconium oxide therein is highly resistant to corrosive chemicals while maintaining superior resistance to plasma and corrosive gases.
1. An yttrium oxide-based sintered body comprising:
yttrium oxide as a main constituent; and
0.5 wt % or more and 1.0 wt % or less of zirconium on a ZrO 2 basis such that a balance between a resistance to plasma and corrosive gases and another resistance to corrosive chemicals is improved,
whereby the body is used as a member including a portion exposed to a corrosive gas or a corrosive chemical.
2. The yttrium oxide-based sintered body according to claim 1 , wherein:
a total amount of metal elements excluding the yttrium and the zirconium is 1000 ppm or less; and
of the metal elements, an amount of each of Si, Ca, and Na is 150 ppm or less.
3. A semiconductor production system member comprising the yttrium oxide-based sintered body according to claim 2 .
4. A semiconductor production system member comprising the yttrium oxide-based sintered body according to claim 1 .