Granted Patent B2

US 12,362,266 · App. 18/595,569 · Granted Jul 15, 2025

Inventors: Chee Hiong Chew (Seremban, MY); Atapol Prajuckamol (Thanyaburi, TH); Stephen St. Germain (Gilbert, AZ); Yusheng Lin (Phoenix, AZ)

Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

H01L23/49575H01L23/367H01L23/4093H01L23/49568H01L23/49582H01L24/80H01L25/0657

Abstract

Claims (38)

1. A semiconductor package comprising:

a first die coupled to a first substrate through a first sintering material;

a second die coupled to a second substrate through a second sintering material;

a first clip coupled to the first die through a third sintering material;

a second clip coupled to the second die through a fourth sintering material; and

a lead frame coupled directly to and between the first substrate and the second substrate;

wherein a perimeter of the first substrate only partially overlaps a perimeter of the second substrate and the perimeter of the second substrate only partially overlaps the perimeter of the first substrate when the first substrate and second substrate are coupled through the lead frame.

2. The semiconductor package of claim 1 , wherein the first sintering material is directly coupled to and between the first substrate and the first die, the second sintering material is directly coupled to and between the second substrate and the second die, the third sintering material is directly coupled to and between the first die and the first clip, and the fourth sintering material is directly coupled to and between the second die and the second clip.

3. The semiconductor package of claim 1 , further comprising a heat sink coupled with one of the first substrate, the second substrate, or any combination thereof.

4. The semiconductor package of claim 1 , wherein the lead frame comprises one or more leads with a cross sectional shape that provides separation between the first substrate and the second substrate.

5. The semiconductor package of claim 4 , wherein the cross sectional shape comprises a C-shape.

6. The semiconductor package of claim 4 , wherein the cross sectional shape comprises an S-shape.

7. A semiconductor package comprising:

a lead frame;

a first substrate mechanically and electrically coupled to one or more leads at a first side of the lead frame;

a second substrate mechanically and electrically coupled to one or more leads at a second side of the lead frame;

a first die coupled to the first substrate through a first sintering material;

a second die coupled to the second substrate through a second sintering material;

a first clip coupled to the first die through a third sintering material; and

a second clip coupled to the second die through a fourth sintering material;

wherein, the lead frame is directly coupled to the first substrate and the second substrate.

8. The semiconductor package of claim 7 , further comprising a third die coupled to the first substrate through the first sintering material, a fourth die coupled to the second substrate through the second sintering material, a third clip coupled to the third die through the third sintering material, and a fourth clip coupled to the fourth die through the fourth sintering material.

9. The semiconductor package of claim 7 , wherein the first clip is directly coupled to the first die through the third sintering material and is directly coupled to the first substrate through the first sintering material.

10. The semiconductor package of claim 7 , wherein the first substrate and the second substrate are asymmetrically coupled through the lead frame.

11. The semiconductor package of claim 9 , wherein the one or more leads is directly coupled to a terminal of the first substrate and a terminal of the second substrate and wherein the terminal of the first substrate is aligned with the terminal of the second substrate.

12. The semiconductor package of claim 9 , wherein the one or more leads is directly coupled to a terminal of the first substrate and a terminal of the second substrate and wherein the terminal of the first substrate is misaligned with the terminal of the second substrate.

13. A semiconductor package comprising:

a first substrate coupled to a second substrate;

a lead frame coupled directly to and between the first substrate and the second substrate;

a first clip coupled to the first substrate through a first sintering material; and

a second clip coupled to the second substrate through a second sintering material;

wherein the first substrate and the second substrate are asymmetrically coupled through the lead frame.

14. The semiconductor package of claim 13 , wherein an outer edge of the first substrate extends beyond a perimeter of the second substrate and an outer edge of the second substrate extends beyond a perimeter of the first substrate.

15. The semiconductor package of claim 13 , further comprising a heat sink coupled with one of the first substrate, the second substrate, or any combination thereof.

16. The semiconductor package of claim 13 , further comprising a first die coupled between the first substrate and the first clip and a second die coupled between the second substrate and the second clip.

17. The semiconductor package of claim 13 , wherein a perimeter of a first side of the first substrate extends outside of a perimeter of a first side of the second substrate and the perimeter of the first side of the second substrate extends outside of the perimeter of the first side of the first substrate, wherein the first side of the first substrate faces the first side of the second substrate.

18. The semiconductor package of claim 13 , wherein the first sintering material bonds the first substrate to the first clip and a first die and the second sintering material bonds the second substrate to the second clip and a second die.

19. The semiconductor package of claim 13 , wherein the lead frame comprises leads comprising one of a C-shaped or S-shaped cross sectional shape.

Assignments (1)

Continuity (5)

References Cited (57)