Thermally Enhanced FCBGA Package
A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.
1 . A method of making a semiconductor device, comprising:
providing a substrate;
providing a heat spreader including an opening formed through the heat spreader;
disposing a semiconductor die over the substrate;
disposing the heat spreader over the substrate with the semiconductor die in the opening; and
dispensing a thermally conductive material in the opening between the heat spreader and semiconductor die.
2 . The method of claim 1 , wherein the thermally conductive material includes a curable material.
3 . The method of claim 1 , further including forming a conductive layer over the substrate, heat spreader, and thermally conductive material.
4 . The method of claim 1 , further including dispensing the thermally conductive material with a surface of the thermally conductive material being coplanar to a surface of the heat spreader and a surface of the semiconductor die.
5 . The method of claim 1 , further including dispensing the thermally conductive material as a liquid to completely fill a gap between the heat spreader and semiconductor die.
6 . The method of claim 1 , further including:
half-etching a surface of the heat spreader; and
disposing the heat spreader with the half-etched surface oriented toward the substrate.
7 . A method of making a semiconductor device, comprising:
providing a heat spreader including an opening formed through the heat spreader;
disposing a semiconductor die in the opening; and
dispensing a thermally conductive material in the opening between the heat spreader and semiconductor die.
8 . The method of claim 7 , wherein the thermally conductive material includes a curable adhesive.
9 . The method of claim 8 , further including:
curing the thermally conductive material; and
forming a conductive layer over the thermally conductive material, semiconductor die, and heat spreader after curing.
10 . The method of claim 7 , further including disposing the heat spreader over a semiconductor package.
11 . The method of claim 7 , further including dispensing the thermally conductive material with a surface of the thermally conductive material being coplanar to a surface of the heat spreader and a surface of the semiconductor die.
12 . The method of claim 7 , further including:
dispensing the thermally conductive material extending over a top surface of the heat spreader; and
backgrinding the thermally conductive material to be coplanar to the heat spreader and semiconductor die.
13 . The method of claim 7 , wherein the thermally conductive material is dispensed to completely fill an opening between the semiconductor die and heat spreader.
14 . A semiconductor device, comprising:
a substrate;
a heat spreader including an opening disposed over the substrate;
a semiconductor die disposed over the substrate in the opening; and
a thermally conductive adhesive dispensed in the opening between the heat spreader and semiconductor die.
15 . The semiconductor device of claim 14 , wherein a surface of the heat spreader is half-etched and the surface of the heat spreader is oriented toward the substrate.
16 . The semiconductor device of claim 14 , further including a conductive layer formed over the semiconductor die, heat spreader, and thermally conductive material.
17 . The semiconductor device of claim 16 , wherein the conductive layer extends continuously from the heat spreader to the semiconductor die.
18 . The semiconductor device of claim 17 , wherein a surface of the thermally conductive material is substantially coplanar to a surface of the semiconductor die and a surface of the heat spreader.
19 . The semiconductor device of claim 14 , further including a semiconductor package disposed between the heat spreader and substrate.
20 . A semiconductor device, comprising:
a heat spreader including an opening;
a semiconductor die disposed in the opening; and
a thermally conductive adhesive dispensed in the opening between the heat spreader and semiconductor die.
21 . The semiconductor device of claim 20 , wherein the heat spreader is half-etched around the opening.
22 . The semiconductor device of claim 20 , further including a conductive layer formed over the thermally conductive material, semiconductor die, and heat spreader.
23 . The semiconductor device of claim 22 , wherein the conductive layer extends continuously from the heat spreader to the semiconductor die.
24 . The semiconductor device of claim 20 , further including an electrical component disposed in a cavity of the heat spreader.
25 . The semiconductor device of claim 24 , wherein the electrical component is a semiconductor package.