COMPOUND SEMICONDUCTOR AMPLIFIER AND CIRCUIT MODULE
A compound semiconductor amplifier includes, on an upper side of a semi-insulating substrate, a compound semiconductor, and an amplifier, wherein the semi-insulating substrate has a substrate thickness for converting a wavelength at a first frequency into a second range of wavelength inside the semi-insulating substrate, and includes, on a lower surface, a metal layer having a sheet resistance value in a third range, the first frequency is a maximum frequency being used in the compound semiconductor amplifier, the second range of wavelength is 1/12 to ½ of the wavelength of the first frequency, and the third range is 3 to 1000 ohms.
1 . A compound semiconductor amplifier comprising: on an upper side of a semi-insulating substrate,
a compound semiconductor; and an amplifier,
wherein the semi-insulating substrate has a substrate thickness for converting a wavelength at a first frequency into a second range of wavelength inside the semi-insulating substrate, and includes, on a lower surface, a metal layer having a sheet resistance value in a third range,
the first frequency is a maximum frequency being used in the compound semiconductor amplifier,
the second range of wavelength is 1/12 to ½ of the wavelength of the first frequency, and
the third range is 3 to 1000 ohms.
2 . The compound semiconductor amplifier according to claim 1 , wherein the second range of wavelength is ¼ to ½ of the wavelength of the first frequency, and
the third range is 6 to 1000 ohms.
3 . The compound semiconductor amplifier according to claim 1 , wherein the metal layer includes a high heat dissipation substrate on a side opposite to the semi-insulating substrate, and
the high heat dissipation substrate has a thermal conductivity higher than a thermal conductivity of the semi-insulating substrate and a resistivity equal to or higher than a resistivity of the semi-insulating substrate.
4 . The compound semiconductor amplifier according to claim 1 , wherein a component of the semi-insulating substrate includes gallium arsenide, indium phosphide, gallium nitride, aluminum nitride, or silicon carbide.
5 . The compound semiconductor amplifier according to claim 3 , wherein a component of the high heat dissipation substrate includes gallium nitride, aluminum nitride, silicon carbide, or diamond.
6 . The compound semiconductor amplifier according to claim 3 , wherein the high heat dissipation substrate has a substrate thickness that is ⅙ to 1 of the wavelength of the first frequency inside the high heat dissipation substrate.
7 . The compound semiconductor amplifier according to claim 1 , wherein a component of the metal layer includes titanium, tungsten, molybdenum, tantalum, nichrome, chromium, platinum, aluminum, gold, copper, silver, or a laminate of titanium, tungsten, molybdenum, tantalum, nichrome, chromium, platinum, aluminum, gold, copper, or silver.
8 . A circuit module that stacks a high-frequency circuit board on which a compound semiconductor amplifier is mounted at an interval of ½ to one wavelength at a first frequency with respect to a wavelength in air,
the compound semiconductor amplifier including: on an upper side of a semi-insulating substrate,
a compound semiconductor; and an amplifier,
wherein the semi-insulating substrate has a thickness for converting a wavelength at a first frequency into a second range of wavelength inside the semi-insulating substrate, and includes, on a lower surface, a metal layer having a sheet resistance value in a third range,
the first frequency is a maximum frequency being used in the compound semiconductor amplifier,
the second range of wavelength is 1/12 to ½ of the wavelength of the first frequency, and
the third range is 3 to 1000 ohms.
9 . The circuit module according to claim 8 , wherein the metal layer includes a high heat dissipation substrate on a side opposite to the semi-insulating substrate,
the high heat dissipation substrate has a thermal conductivity higher than a thermal conductivity of the semi-insulating substrate and a resistivity equal to or higher than a resistivity of the semi-insulating substrate, and
a sum of a thickness of the semi-insulating substrate and a thickness of the high heat dissipation substrate falls within a fourth range.
10 . The circuit module according to claim 9 , wherein the fourth range is 75 to 500 micrometers.
11 . The circuit module according to claim 8 , wherein a component of the semi-insulating substrate includes gallium arsenide, indium phosphide, gallium nitride, aluminum nitride, or silicon carbide.
12 . The circuit module according to claim 9 , wherein a component of the high heat dissipation substrate includes gallium nitride, aluminum nitride, silicon carbide, or diamond.
13 . The circuit module according to claim 9 , wherein the high heat dissipation substrate has a substrate thickness that is ⅙ to 1 of the wavelength of the first frequency inside the high heat dissipation substrate.
14 . The circuit module according to claim 8 , wherein a component of the metal layer includes titanium, tungsten, molybdenum, tantalum, nichrome, chromium, platinum, aluminum, gold, copper, silver, or a laminate of titanium, tungsten, molybdenum, tantalum, nichrome, chromium, platinum, aluminum, gold, copper, or silver.