METHOD FOR ADJUSTING THE TELECENTRICITY IN A PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY

1 . A method of adjusting a microlithography projection exposure system which comprises an illumination system and a projection system, the microlithography projection exposure system configured to guide radiation, the method comprising:

adjusting a telecentricity in the microlithography projection exposure system by adjusting an optical path of the microlithography projection exposure system, adjusting an optical axis of the microlithography projection exposure system and/or by adjusting the radiation,

wherein adjusting the telecentricity in the microlithography projection exposure system comprises adjusting a telecentricity in the illumination system.

2 . The method of claim 1 , wherein the telecentricity is adjusted based on a pupil measurement of the microlithography projection exposure system.

3 . The method of claim 2 , further comprising making the pupil measurement of the microlithography projection exposure system.

4 . The method of claim 1 , wherein the telecentricity is adjusted on:

an object side of the illumination system;

an image side of the illumination system;

on an object side of the projection system; and/or

on an image side of the projection system.

5 . The method of claim 1 , wherein the telecentricity is adjusted:

in or adjacent an object plane of the illumination system;

in or adjacent an image plane of the illumination system;

in or adjacent an object plane of the projection system; and/or

in or adjacent an image plane of the projection system.

6 . The method of claim 1 , further comprising using the microlithography projection exposure apparatus to expose a radiation-sensitive material of a substrate to radiation, wherein the telecentricity is adjusted before, during and/or after exposing the substrate to the radiation.

7 . The method of claim 1 , wherein adjusting the telecentricity comprises adjusting a position, an inclination and/or a deformation of a first optical element, and the first optical element is in an optical path of the radiation in the microlithography projection exposure apparatus.

8 . (canceled)

9 . (canceled)

10 . The method of claim 7 , wherein the first optical element is adjacent to a field lens in the microlithography projection exposure system, and/or wherein the first optical element is adjacent to a mask in in the microlithography projection exposure system.

11 . The method of claim 7 , wherein the first optical element is in or adjacent:

an object plane of the projection system;

an object field of the projection system;

a field plane of the microlithography projection exposure apparatus; and/or

an image plane of the microlithography projection exposure apparatus.

12 . The method of claim 7 , wherein the first optical element comprises a radiation impingement surface and a radiation exit surface, and:

at least a portion of the radiation impingement surface is inclined relative to an object plane of the projection system;

at least a portion of the radiation exit surface is inclined relative to the object plane of the projection system;

at least a portion of the radiation impingement surface is parallel to the object plane of the projection system; and/or

at least a portion of the radiation exit surface is parallel to the object plane of the projection system.

13 . The method of claim 7 , wherein:

the microlithography projection exposure apparatus further comprises second and third optical elements in the optical path of the radiation; and

the second and third optical elements are displaceable relative to each other.

14 . The method of claim 13 , wherein the second optical element and/or the third optical element is/are:

adjacent a field lens of the microlithography projection exposure system; and/or

adjacent to a mask in the microlithography projection exposure system.

15 . The method of claim 13 , wherein the second optical element and/or the third optical element is/are in or adjacent:

an object plane of the projection system;

an object field of the projection system;

a field plane of the microlithography projection exposure apparatus; and/or

an image plane of the microlithography projection exposure apparatus.

16 . The method of claim 13 , wherein adjusting the telecentricity comprises adjusting:

a position, an inclination and/or deformation of the second optical element;

a position, an inclination and/or deformation of the third optical element;

displacing the second and third optical elements relative to each other.

17 . The method of claim 1 , wherein adjusting the telecentricity comprises setting a diameter of a cross-section of the radiation.

18 . (canceled)

19 . (canceled)

20 . The method of claim 19 , wherein the filter element absorbs some of the radiation to restrict the cross-section of the radiation.

21 . The method of claim 19 , wherein:

the filter element asymmetrically filters the radiation; and/or

the filter element guides the radiation so that, in the pupil plane, at least sections of an edge of the cross-section of the radiation are straight.

22 . The method of claim 1 , wherein the telecentricity is adjusted by applying an aberration to the radiation.

23 . (canceled)

24 . A method for setting a sidewall angle of a sidewall of a profile to be created in a radiation-sensitive layer supported by a substrate using radiation guided by a projection exposure apparatus which comprises an illumination system, a projection system and a mask, the method comprising:

setting the sidewall angle of the sidewall of the profile to be created in the radiation-sensitive layer supported by the substrate.

25 . The method of claim 24 , wherein setting the sidewall angle comprises adjusting a telecentricity in the microlithography projection exposure system by adjusting an optical path of the microlithography projection exposure system, adjusting an optical axis of the microlithography projection exposure system and/or by adjusting the radiation, and

wherein adjusting the telecentricity in the microlithography projection exposure system comprises adjusting a telecentricity in the illumination system.

26 .- 33 . (canceled)