IP Library › Assignment 004811/0260
Patent Assignment
Reel/Frame 004811/0260

Security Interest

Recorded: 1987-10-26 Pages: 19
Assignor
Assignee
CHRYSLER CAPITAL CORPORATION
GREENWICH OFFICE PARK 1, 51 WEAVER ST. GREENWICH, CONN 06836-6900
Covered Properties (54)
Solid State Relay Circuit with Optical Isolation and Zero-Cross Firing
Patent: 3,723,769 →
Application: 05/194,738 →
Semiconductor Device with Pressure Connection Electrodes and with Head Ers Cemented to Insulation Ring
Patent: 3,831,067 →
Application: 05/253,200 →
Process for Simultaneous Diffusion of Group Iii-Group V Intermetallic Compounds into Semiconductor Wafers
Patent: 3,795,554 →
Application: 05/316,870 →
Low Impedance Transmission Line for Bypassing Radio Frequency Energy a Round High Voltage Rectifier Stacks
Patent: 3,909,699 →
Application: 05/509,102 →
Solid State Relay
Patent: 249,883 →
Application: 05/755,355 →
Method of Manufacture of Zender Diodes
Patent: 4,138,280 →
Application: 05/874,416 →
Sleep State Inhibited Wake-Up Alarm
Patent: 4,228,806 →
Application: 05/909,580 →
High Power Transistor Having Emitter Pattern with Symmetric Lead Connection Pads
Patent: 4,236,171 →
Application: 05/925,379 →
High Reverse Voltage Semiconductor Device with Fast Recovery Time with Central Depression
Patent: 4,255,757 →
Application: 05/966,644 →
Stud-Mounted Pressure Assembled Semiconductor Device
Patent: 4,305,087 →
Application: 06/053,702 →
Clad Molybdenum Disks for Alloyed Diode
Patent: 4,358,784 →
Application: 06/098,850 →
Process for Manufacture of High Power Mosfet with Laterally Distributed High Carrier Density Beneath the Gate Oxide
Patent: 4,593,302 →
Application: 06/178,689 →
Stencil Mask Process for High Power, High Speed Controlled Rectifiers
Patent: 4,320,571 →
Application: 06/196,684 →
Planar Structure for High Voltage Semiconductor Devices with Gaps in Glassy Layer Over High Field Regions
Patent: 4,412,242 →
Application: 06/207,123 →
Composite Metal and Polysilicon Field Plate Structure for High Voltage Semiconductor Devices
Patent: 4,399,449 →
Application: 06/207,124 →
Floating Guard Region and Process of Manufacture for Semiconductor Switching Device Using Spaced Mos Transistors Having a Common Drain Region
Patent: 4,414,560 →
Application: 06/207,126 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,376,286 →
Application: 06/232,713 →
Plural Polygon Source Pattern for Mosfet
Application: 06/243,544 →
Four-Leaded Dual in-Line Package Module for Semiconductor Devices
Patent: 4,642,419 →
Application: 06/251,268 →
Method of Manufacture of High Speed, High Power Bipolar Transistor and New Transistor Structure
Patent: 4,416,708 →
Application: 06/339,672 →
Method of Manufacture of a Schottky Using Platinum Encapsulated Between Layers of Palladium Sintered into Silicon Surface
Patent: 4,398,344 →
Application: 06/355,718 →
Solid State Relay Circuit Employing Mosfet Power Switching Devices
Patent: 4,438,356 →
Application: 06/361,184 →
Schottky Device and Method of Manufacture Using Palladium and Platinum Intermetallic Alloys and Titanium Barrier for Low Reverse Leakage Over Wide Temperature Range
Patent: 4,408,216 →
Application: 06/393,029 →
Scr Having Multiple Gates and Phosphorus Gettering Exteriorly of a Ring Gate
Patent: 4,563,698 →
Application: 06/407,425 →
Switching Power Supply Circuit Having Constant Output for a Wide Range of Input Voltage
Patent: 4,389,702 →
Application: 06/412,103 →
Lead Frame Structure
Patent: 4,556,896 →
Application: 06/412,928 →
High Voltage Solid State Relay
Patent: 4,529,888 →
Application: 06/417,467 →
Hammer Drive Circuit Using Power Mosfets
Patent: 4,540,899 →
Application: 06/431,057 →
Metallizing System for Semiconductor Wafers
Patent: 4,878,099 →
Application: 06/447,760 →
Metallizing Process and Structure for Semiconductor Devices
Application: 06/447,761 →
A.C. Solid State Relay Circuit and Structure
Patent: 4,535,251 →
Application: 06/451,792 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,705,759 →
Application: 06/456,813 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,642,666 →
Application: 06/471,818 →
High Power Mosfet with Direct Connection from Connection Pads to Underlying Silicon
Patent: 4,789,882 →
Application: 06/477,012 →
Transformer-Isolated Power Mosfet Driver Circuit
Patent: 4,511,815 →
Application: 06/523,121 →
Schottky Diode with Titanium or Like Layer Contacting the Dielectric Layer
Patent: 4,899,199 →
Application: 06/537,509 →
Fast Turn-Off Circuit for Photovoltaic Driven Mosfet
Patent: 4,777,387 →
Application: 06/581,784 →
Twin Hull Disassemblable Rowboat
Patent: 4,557,210 →
Application: 06/595,427 →
Metallizing Process for Semiconductor Devices
Patent: 4,663,820 →
Application: 06/619,638 →
Bidirectional Output Semiconductor Field Effect Transistor
Patent: 4,755,697 →
Application: 06/755,858 →
Molding Process for Semiconductor Devices and Lead Frame Structure Therefor
Patent: 4,641,418 →
Application: 06/774,346 →
Method of Manufacture of Semiconductor Device
Patent: 4,638,553 →
Application: 06/784,177 →
Power Interface Circuit with Control Chip Powered from Power Chip
Patent: 4,786,826 →
Application: 06/830,740 →
Package for Photoactivated Semiconductor Device
Patent: 4,794,431 →
Application: 06/854,425 →
Phase-Controlled Power Switching Circuit
Patent: 4,703,197 →
Application: 06/867,533 →
Process for Manufacture of High Power Mosfet with Laterally Distributed High Carrier Density Beneath the Gate Oxide
Patent: 4,680,853 →
Application: 06/869,109 →
Bidirectional Output Semiconductor Field Effect Transistor and Method for Its Manufacture
Patent: 4,721,986 →
Application: 06/878,196 →
Optically Triggered Lateral Thyristor with Auxiliary Region
Patent: 4,779,126 →
Application: 06/908,867 →
Process for Manufacture of Radiation Resistant Power Mosfet and Radiation Resistant Power Mosfet
Patent: 5,338,693 →
Application: 07/001,629 →
Low Profile Semiconductor Package
Patent: 4,845,545 →
Application: 07/014,659 →
Semi-Conductor Modules
Patent: 4,853,762 →
Application: 07/028,681 →
Process for Balancing Forward and Reverse Characteristic of Thyristors
Patent: 4,792,530 →
Application: 07/032,483 →
Structure and Method of Manufacture of High Power Mosfet Device
Application: 07/048,991 →
High Power Mosfet and Integrated Control Circuit Therefor for High-Side Switch Application
Patent: 4,866,495 →
Application: 07/054,627 →
Related Assignments (14)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. Aug 18, 1980
From: LIDOW ALEXANDER; HERMAN THOMAS
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003795/0660 →
Assignment of Assignors Interest. Oct 14, 1980
From: HAUCK JAMES H.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 003824/0505 →
Assignment of Assignors Interest. Nov 17, 1980
From: HERMAN THOMAS; LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003846/0693 →
Assignment of Assignors Interest. Nov 17, 1980
From: HERMAN THOMAS; LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003846/0694 →
Assignment of Assignors Interest. Nov 17, 1980
From: LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 003846/0649 →
Assignment of Assignors Interest. Apr 6, 1981
From: MEDDLES DENNIS
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 003876/0786 →
Assignment of Assignors Interest. Jan 15, 1982
From: ABDOULIN, EDGAR; LIDOW, ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 003965/0549 →
Assignment of Assignors Interest. Mar 8, 1982
From: GOULD, HERBERT J.
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 003980/0817 →
Assignment of Assignors Interest. Mar 24, 1982
From: FLEISCHER, KENNETH H.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 003989/0631 →
Assignment of Assignors Interest. Aug 12, 1982
From: NILARP, ANDERS
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 004083/0580 →
Assignment of Assignors Interest. Mar 20, 1987
From: EWER, PETER R.; ELLARD, JEFFREY R.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004682/0455 →
Assignment of Assignors Interest. Feb 1, 1988
From: INTERNATIONAL RECTIFIER CORPORATION, 1521 GRAND AVENUE, EL SEGUNDO, CA. 90245, A DE. CORP.
To: SILICON POWER CUBE CORPORATION
Reel/Frame 004833/0872 →
Release by Secured Party of a Security Agreement Recorded at Reel 4811 Frame 0260. Jun 9, 1992
From: CHRYSLER CAPITAL CORPORATION
To: INTERNATIONAL RECTIFIER CORPORATION A DE CORP.
Reel/Frame 006147/0448 →
Security Interest Jul 19, 1999
From: INTERNATIONAL RECTIFIER CORP.
To: BANQUE NATIONALE DE PARIS
Reel/Frame 010070/0701 →