IP Library › Assignment 010070/0701
Patent Assignment
Reel/Frame 010070/0701

Security Interest

Recorded: 1999-07-19 Pages: 45
Assignor
INTERNATIONAL RECTIFIER CORP.
Executed: 1999-07-11
Assignee
BANQUE NATIONALE DE PARIS
725 SOUTH FIGUEROA STREET, SUITE 2090, LOS ANGELES, CALIFORNIA, 90017
Covered Properties (228)
Clad Molybdenum Disks for Alloyed Diode
Patent: 4,358,784 →
Application: 06/098,850 →
Process for Manufacture of High Power Mosfet with Laterally Distributed High Carrier Density Beneath the Gate Oxide
Patent: 4,593,302 →
Application: 06/178,689 →
Planar Structure for High Voltage Semiconductor Devices with Gaps in Glassy Layer Over High Field Regions
Patent: 4,412,242 →
Application: 06/207,123 →
Composite Metal and Polysilicon Field Plate Structure for High Voltage Semiconductor Devices
Patent: 4,399,449 →
Application: 06/207,124 →
Floating Guard Region and Process of Manufacture for Semiconductor Switching Device Using Spaced Mos Transistors Having a Common Drain Region
Patent: 4,414,560 →
Application: 06/207,126 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,376,286 →
Application: 06/232,713 →
Four-Leaded Dual in-Line Package Module for Semiconductor Devices
Patent: 4,642,419 →
Application: 06/251,268 →
Method of Manufacture of a Schottky Using Platinum Encapsulated Between Layers of Palladium Sintered into Silicon Surface
Patent: 4,398,344 →
Application: 06/355,718 →
Schottky Device and Method of Manufacture Using Palladium and Platinum Intermetallic Alloys and Titanium Barrier for Low Reverse Leakage Over Wide Temperature Range
Patent: 4,408,216 →
Application: 06/393,029 →
A.C. Solid State Relay Circuit and Structure
Patent: 4,535,251 →
Application: 06/451,792 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,705,759 →
Application: 06/456,813 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,642,666 →
Application: 06/471,818 →
High Power Mosfet with Direct Connection from Connection Pads to Underlying Silicon
Patent: 4,789,882 →
Application: 06/477,012 →
Schottky Diode with Titanium or Like Layer Contacting the Dielectric Layer
Patent: 4,899,199 →
Application: 06/537,509 →
Fast Turn-Off Circuit for Photovoltaic Driven Mosfet
Patent: 4,777,387 →
Application: 06/581,784 →
Bidirectional Output Semiconductor Field Effect Transistor
Patent: 4,755,697 →
Application: 06/755,858 →
Molding Process for Semiconductor Devices and Lead Frame Structure Therefor
Patent: 4,641,418 →
Application: 06/774,346 →
Power Interface Circuit with Control Chip Powered from Power Chip
Patent: 4,786,826 →
Application: 06/830,740 →
Process for Manufacture of High Power Mosfet with Laterally Distributed High Carrier Density Beneath the Gate Oxide
Patent: 4,680,853 →
Application: 06/869,109 →
Bidirectional Output Semiconductor Field Effect Transistor and Method for Its Manufacture
Patent: 4,721,986 →
Application: 06/878,196 →
Optically Triggered Lateral Thyristor with Auxiliary Region
Patent: 4,779,126 →
Application: 06/908,867 →
Process for Manufacture of Radiation Resistant Power Mosfet and Radiation Resistant Power Mosfet
Patent: 5,338,693 →
Application: 07/001,629 →
Low Profile Semiconductor Package
Patent: 4,845,545 →
Application: 07/014,659 →
High Power Mosfet and Integrated Control Circuit Therefor for High-Side Switch Application
Patent: 4,866,495 →
Application: 07/054,627 →
Depletion Mode Power Mosfet with Refractory Gate and Method of Making Same
Patent: 5,472,888 →
Application: 07/160,172 →
Metallizing Process and Structure for Semiconductor Devices
Patent: 4,965,173 →
Application: 07/209,296 →
Bidirectional Mosfet Switching Circuit with Single Gate Bias
Patent: 4,888,504 →
Application: 07/255,111 →
Plural Polygon Source Pattern for Mosfet
Patent: 5,008,725 →
Application: 07/291,423 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 5,191,396 →
Application: 07/303,818 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 4,959,699 →
Application: 07/371,678 →
High Power Mosfet and Integrated Control Circuit Therefor for High- Side Switch Application
Patent: 5,023,678 →
Application: 07/391,487 →
Semiconductor High-Power Mosfet Device
Patent: 4,974,059 →
Application: 07/399,345 →
Platinum Diffusion Process
Patent: 4,925,812 →
Application: 07/410,323 →
Insulated Gate Bipolar Transistor Power Module
Patent: 4,965,710 →
Application: 07/438,094 →
Four-Terminal Unity Power Factor Electronic Rectifier
Patent: 5,047,912 →
Application: 07/580,101 →
Solderable Front Metal Contact for Mos Devices
Patent: 5,047,833 →
Application: 07/599,148 →
Plural Polygon Source Pattern for Mosfet
Patent: 5,130,767 →
Application: 07/653,017 →
Quasi Push-Pull Single Switch Current-Fed Fly-Back Converter
Patent: 5,122,946 →
Application: 07/719,200 →
Protection Circuit for Power Fets in a Half-Bridge Circuit
Patent: 5,159,515 →
Application: 07/856,864 →
Power Transistor Driver Circuit with Current Sensing and Current Overprotection and Method for Protecting Power Transistor from Overcurrent
Patent: 5,325,258 →
Application: 07/936,028 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 5,338,961 →
Application: 08/017,511 →
Igbt Fault Current Limiting Circuit
Patent: 5,444,591 →
Application: 08/040,212 →
Power Mosfet with Overcurrent and Over-Temperature Protection
Patent: 5,497,285 →
Application: 08/121,288 →
Method of Manufacturing a Back Contact for Semiconductor Die
Patent: 5,451,544 →
Application: 08/137,586 →
Gate Lead for Center Gate Pressure Assembled Thyristor
Patent: 5,436,473 →
Application: 08/175,784 →
Self-Generating Resonant Power Supply and Method of Producing Power for Transistor Switching Circuit
Patent: 5,455,758 →
Application: 08/198,212 →
Mosgate Driver for Ballast Circuits
Patent: 5,545,955 →
Application: 08/206,123 →
Passive Power Factor Ballast Circuit for the Gas Discharge Lamps
Patent: 5,387,847 →
Application: 08/206,512 →
Mos-Controlled Thyristor with Current Saturation Characteristics
Patent: 5,498,884 →
Application: 08/265,397 →
Bidirectional Thyristor with Mos Turn-Off Capability with a Single Gate
Patent: 5,483,087 →
Application: 08/272,769 →
Reset Dominant Level-Shift Circuit for Noise Immunity
Patent: 5,514,981 →
Application: 08/273,695 →
Plural Polygon Source Pattern for Mosfet
Application: 08/274,748 →
Three-Terminal Thyristor with Single Mos-Gate Controlled Characteristics
Patent: 5,444,272 →
Application: 08/281,917 →
Process for Manufacture of Radiation Resistant Power Mosfet and Radiation Resistant Power Mosfet
Patent: 5,475,252 →
Application: 08/288,585 →
Power Mosfet with Overcurrent and Over-Temperature Protection and Control Circuit Decoupled from Body Diode
Patent: 5,550,701 →
Application: 08/298,383 →
Method and Circuit to Improve Output Voltage Regulation and Noise Rejection of a Power Factor Control Stage
Patent: 5,602,465 →
Application: 08/298,429 →
Trench Depletion Mosfet
Patent: 5,581,100 →
Application: 08/298,462 →
Process for Manufacture of Mos Gated Device with Reduced Mask Count
Patent: 5,795,793 →
Application: 08/299,533 →
Mos Gate Driver Integrated Circuit for Ballast Circuits
Patent: 5,550,436 →
Application: 08/299,561 →
Method and Apparatus for Short Circuit Protection of Power Transistor Device
Patent: 5,467,242 →
Application: 08/303,137 →
Igbt with Increased Ruggedness
Patent: 5,548,133 →
Application: 08/308,556 →
Power Transistor Device Having Ultra Deep Increased Concentration Region
Patent: 5,661,314 →
Application: 08/316,112 →
Temperature Detection of Power Semiconductors Performed by a Co-Packaged Analog Integrated Circuit
Patent: 6,092,927 →
Application: 08/337,550 →
Oscillating Driver Circuit with Power Factor Correction, Electronic Lamp Ballast Employing Same and Driver Method
Patent: 5,612,597 →
Application: 08/365,831 →
Photovoltaic Generator with Dielectric Isolation and Bonded, Insulated Wafer Layers
Patent: 5,549,762 →
Application: 08/372,600 →
Reduced Mask Process for Manufacture of Mos Gated Devices
Patent: 5,474,946 →
Application: 08/390,099 →
Igbt Switching Voltage Transient Protection Circuit
Patent: 5,559,656 →
Application: 08/392,233 →
Mosfet Driver with Fault Reporting Outputs
Patent: 5,543,994 →
Application: 08/394,702 →
Process for Manufacture of P Channel Mos-Gated Device
Patent: 5,595,918 →
Application: 08/409,181 →
Termination Structure for Mosgated Device with Reduced Mask Count and Process for Its Manufacture
Patent: 5,557,127 →
Application: 08/409,347 →
Protected Three-Pin Mosgated Power Switch with Separate Input Reset Signal Level
Patent: 5,563,759 →
Application: 08/420,193 →
Integrated Mosgated Power Semiconductor Device with High Negative Clamp Voltage and Fail Safe Operation
Patent: 5,592,117 →
Application: 08/420,194 →
Charge Pump Circuit for High Side Switch
Patent: 5,672,992 →
Application: 08/420,301 →
Method and Circuit for Driving Power Transistors in a Half Bridge Configuration from Control Signals Referenced to Any Potential Between the Line Voltage and the Line Voltage Return and Integrated Circuit Incorporating the Circuit
Patent: 5,502,412 →
Application: 08/433,841 →
Clamping Circuit for Igbt in Spark Plug Ignition System
Patent: 5,569,982 →
Application: 08/442,813 →
High Power Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 5,598,018 →
Application: 08/470,494 →
Mos-Gated Power Semiconductor Devices with Conductivity Modulation by Positive Feedback Mechanism
Patent: 5,623,151 →
Application: 08/491,250 →
Method and Circuit to Eliminate False Triggering of Power Devices in Optically Coupled Drive Circuits Caused by Dv/Dt Sensitivity of Optocouplers
Patent: 5,594,379 →
Application: 08/499,306 →
Mosgate Driver for Ballast Circuits
Patent: 5,559,394 →
Application: 08/513,688 →
Amorphous Silicon Layer for Top Surface of Semiconductor Device
Patent: 5,523,604 →
Application: 08/515,702 →
Surface Mount Package with Improved Heat Transfer
Patent: 5,625,226 →
Application: 08/516,683 →
Three-Terminal Mos-Gate Controlled Thyristor Structures with Current Saturation Characteristics
Patent: 5,719,411 →
Application: 08/516,824 →
Bidirectional Thyristor with Mos Turn-Off Capability with a Single Gate
Patent: 5,757,033 →
Application: 08/517,059 →
Gate Resistor for Igbt
Patent: 5,592,006 →
Application: 08/530,014 →
Base Resistance Controlled Thyristor Structure with High-Density Layout for Increased Current Capacity
Patent: 5,793,066 →
Application: 08/533,768 →
Igbt with Integrated Control
Patent: 5,798,538 →
Application: 08/560,328 →
Depletion Mode Power Mosfet with Refractory Gate and Method of Making Same
Patent: 5,786,619 →
Application: 08/564,917 →
Reduced Mask Process for Manufacture of Mos Gated Devices Using Dopant-Enhanced-Oxidation of Semiconductor
Patent: 5,783,474 →
Application: 08/570,517 →
Surface Mount Semiconductor Package
Patent: 5,763,949 →
Application: 08/583,219 →
Bidirectional Thyristor with Mos Turn-on and Turn-Off Capability
Patent: 5,629,535 →
Application: 08/586,007 →
Hnthod and Circuit for Protecting Power Circuits Against Short Circuit and Over Current Faults
Patent: 5,687,049 →
Application: 08/592,493 →
Vertical Conduction Mos Controlled Thyristor with Increased Igbt Area and Current Limiting
Patent: 5,844,259 →
Application: 08/618,350 →
Amorphous Silicon Layer for Top Surface of Semiconductor Device
Patent: 5,654,206 →
Application: 08/636,481 →
Polysilicon Field Ring Structure for Power Ic
Patent: 5,686,754 →
Application: 08/660,716 →
Charge Pump Circuit for High Side Switch
Patent: 5,689,208 →
Application: 08/662,821 →
Power Transistor Device Having Ultra Deep Increased Concentration Region
Patent: 5,766,966 →
Application: 08/665,715 →
Soft Start Circuit for Self-Oscillating Drivers
Patent: 5,796,215 →
Application: 08/671,655 →
Power Transistor Device Having Ultra Deep Increased Concentration Region
Patent: 5,644,148 →
Application: 08/674,982 →
Radhard Mosfet with Thick Gate Oxide and Deep Channel Region
Patent: 5,831,318 →
Application: 08/687,224 →
Surface-Mount Semiconductor Package
Patent: 5,760,472 →
Application: 08/690,500 →
Mosgate Driver for Ballast Circuits
Patent: 5,757,141 →
Application: 08/694,649 →
Process for Manufacturing a Schottky Diode with Enhanced Barrier Height and High Thermal Stability
Patent: 5,888,891 →
Application: 08/701,847 →
Mos Gate Driver Integrated Circuit for Ballast Circuits
Patent: 5,747,943 →
Application: 08/703,215 →
Soft-Switching Driver Output Stage and Method
Patent: 5,812,010 →
Application: 08/711,165 →
Mos Gate Driver Circuit with Analog Input and Variable Dead Time Band
Patent: 6,002,213 →
Application: 08/713,729 →
Sic Semiconductor Device
Patent: 5,877,515 →
Application: 08/720,465 →
Termination Structure for Semiconductor Devices and Process for Manufacture Thereof
Patent: 5,940,721 →
Application: 08/725,566 →
Semiconductor Device Mos Gated
Patent: 5,731,604 →
Application: 08/727,142 →
High Voltage Drivers Which Avoid -Vs Failure Modes
Patent: 5,801,557 →
Application: 08/728,309 →
High Voltage Power Schottky with Aluminum Barrier Metal Spaced from First Diffused Ring
Patent: 5,859,465 →
Application: 08/729,873 →
Silicon Resistor with Expansion Plate Electrode
Patent: 5,736,778 →
Application: 08/751,111 →
Circuit for Error Free Operation of Opto-Isolated Driver During Power- Up
Patent: 5,767,731 →
Application: 08/761,838 →
Emitter Switched Thyristor
Patent: 5,757,034 →
Application: 08/768,242 →
Fast Switching Smartfet
Patent: 5,761,020 →
Application: 08/781,700 →
Integrated Schottky Diode and Mosgated Device
Patent: 5,886,383 →
Application: 08/782,568 →
Active Snubber Device for Power Modules
Patent: 5,923,513 →
Application: 08/782,570 →
Buck Regulator Circuit
Patent: 5,818,214 →
Application: 08/783,189 →
Graded Concentration Epitaxial Substrate for Semiconductor Device Having Resurf Diffusion
Patent: 5,861,657 →
Application: 08/783,667 →
Circuit for Sensing Current in Power Trains for Motor Control
Patent: 5,982,136 →
Application: 08/784,233 →
High Speed Igbt
Patent: 5,808,345 →
Application: 08/784,418 →
Short Channel Igbt with Improved Forward Voltage Drop and Improved Switching Power Loss
Patent: 6,008,092 →
Application: 08/786,023 →
Lamp Ballast Drive Circuit Having a Resistor in Place of Boot Strap Diode
Patent: 5,828,184 →
Application: 08/786,768 →
Circuit for Short Circuit Detection Through Resistive Shunt in Power Circuits Using Unipolar Control Voltage
Patent: 5,764,466 →
Application: 08/789,023 →
Improved Igbt and Free-Wheeling Diode Combination
Patent: 5,998,227 →
Application: 08/790,770 →
Heatsink for Surface Mount Device for Circuit Board Mounting
Patent: 5,804,873 →
Application: 08/790,842 →
High Voltage Power Integrated Circuit with Level Shift Operation and Without Metal Crossover
Patent: 5,801,418 →
Application: 08/794,319 →
Multiple Individual Kelvin Emitter Connections to Reduce Current Flow Through Parasitic Diode
Patent: 5,838,185 →
Application: 08/794,658 →
Mos Gated Semiconductor Device with Source Metal Covering the Active Gate
Patent: 5,801,431 →
Application: 08/803,071 →
Power Transistor Device Having Ultra Deep Increased Concentration Region
Patent: 5,904,510 →
Application: 08/807,387 →
Circuit and Method for Improving Short-Circuit Capability of Igbts
Patent: 6,104,149 →
Application: 08/807,781 →
Low Dosage Field Rings for High Voltage Semiconductor Device
Patent: 6,441,455 →
Application: 08/812,848 →
Heat Dissipating Device Package
Patent: 6,242,800 →
Application: 08/815,814 →
Commonly Housed Diverse Semiconductor Die
Patent: 5,814,884 →
Application: 08/816,829 →
Trench Mos Device and Process for Radhard Device
Patent: 6,236,099 →
Application: 08/818,908 →
Current Sensing Circuit for Pulse Width Modulated Motor Drive
Patent: 5,815,391 →
Application: 08/820,574 →
Amorphous Silicon Combined with Resurf Region for Temination for Mosgated Device
Patent: 6,100,572 →
Application: 08/822,398 →
Small Offline Power Supply
Patent: 5,805,433 →
Application: 08/842,713 →
Synchronizing/Driving Circuit for a Forward Synchonous Rectifier
Patent: 5,818,704 →
Application: 08/842,917 →
Power Train Partition for 10 Horsepower Motor Controller
Patent: 5,914,577 →
Application: 08/845,078 →
Ballast Circuit with Lamp Removal Protection and Soft Starting
Patent: 5,932,974 →
Application: 08/865,653 →
Method and Circuit for Driving Power Transistors in a Half Bridge Configuration Allowing for Excessive Negative Swing of the Output Node and Integrated Circuit Incorporating the Circuit
Patent: 6,211,706 →
Application: 08/872,450 →
Lead Frame with Waffled Front and Rear Surfaces
Patent: 5,902,959 →
Application: 08/872,819 →
Igbt with Reduced Forward Voltage Drop and Reduced Switching Loss
Patent: 6,043,112 →
Application: 08/897,248 →
Ballast Ic with Shut-Down Function
Patent: 6,005,354 →
Application: 08/907,136 →
Plural Semiconductor Die Housed in Common Package with Split Heat Sink
Patent: 5,977,630 →
Application: 08/911,866 →
Crushable Bead on Lead Finger Side Surface to Improve Moldability
Patent: 5,886,397 →
Application: 08/915,926 →
Surface Mount to-220 Package and Process for the Manufacture Thereof
Patent: 6,114,750 →
Application: 08/940,230 →
Method of Controlling the Switching Di/Dt and Dv/Dt of a Mos-Gated Power Transistor
Patent: 6,127,746 →
Application: 08/946,870 →
Process for Manufacture of a P-Channel Mos Gated Device with Base Implant Through the Contact Window
Patent: 5,879,968 →
Application: 08/946,984 →
Reverse Battery Protection Circuit
Patent: 5,757,600 →
Application: 08/947,922 →
Process for Manufacture of Mos Gated Device with Self Aligned Cells
Patent: 6,043,126 →
Application: 08/956,062 →
Circuit for Sensing Motor Load Current
Patent: 5,900,714 →
Application: 08/963,936 →
Emitter-Switched Transistor Structures
Patent: 5,910,664 →
Application: 08/964,868 →
Pressure Assembled Motor Cube
Patent: 6,081,039 →
Application: 08/985,508 →
High Band Gap Layer to Isolate Wells in High Voltage Power Integrated Circuits
Patent: 6,310,385 →
Application: 09/007,002 →
Solid State Relay and Circuit Breaker
Patent: 5,926,354 →
Application: 09/007,627 →
Combined Filter Inductor and Hall Current Sensor
Patent: 6,429,639 →
Application: 09/010,464 →
Circuit for Sensing Individual Leg Current in a Motor Controller Using Resistive Shunts
Patent: 5,825,641 →
Application: 09/013,239 →
Power Circuit Providing Reverse Battery Protection and Current and Temperature Sensing
Patent: 5,939,863 →
Application: 09/016,043 →
Stress Clip
Patent: 6,075,286 →
Application: 09/016,372 →
P Channel Radhard Device with Boron Diffused P-Type Polysilicon Gate
Patent: 6,165,821 →
Application: 09/020,837 →
Universal Input Warm-Start Linear Ballast
Patent: 6,031,342 →
Application: 09/022,476 →
Closed-Loop/Dimming Ballast Controller Integrated Circuits
Patent: 6,008,593 →
Application: 09/022,554 →
Phase Detection Control Circuit for an Electronic Ballast
Patent: 6,002,214 →
Application: 09/022,555 →
Insert-Molded Leadframe to Optimize Interface Between Powertrain and Driver Board
Patent: 6,281,579 →
Application: 09/023,125 →
Reflector Layer for the Well Surface of a Photovoltaic Generator
Patent: 5,973,257 →
Application: 09/023,308 →
Integrated Photovoltaic Switch with Integrated Power Device
Application: 09/032,495 →
Low Voltage Mosfet
Patent: 6,114,726 →
Application: 09/038,453 →
Soft Strat Bridge Rectifier Circuit
Patent: 6,009,008 →
Application: 09/052,271 →
Resistor in Series with Bootstrap Diode for Molithic Gate Driver Device
Patent: 5,969,964 →
Application: 09/063,069 →
Commonly Housed Diverse Semiconductor Die with Reduced Inductance
Patent: 6,144,093 →
Application: 09/070,097 →
Instantaneous Junction Temperature Detection
Patent: 6,060,792 →
Application: 09/080,600 →
Single Ended Forward Converter with Synchronous Rectification and Delay Circuit in Phase-Locked Loop
Patent: 6,026,005 →
Application: 09/084,768 →
Circuit for Detecting Near or Below Resonance Operation of a Fluorescent Lamp Driven by Half-Bridge Circuit
Patent: 6,331,755 →
Application: 09/095,062 →
End of Lamp Life or False Lamp Detection Circuit for an Electronic Ballast
Patent: 6,008,592 →
Application: 09/095,063 →
Termination Structure for Semiconductor Devices and Process for Manufacture Thereof
Patent: 6,180,981 →
Application: 09/095,349 →
High Current Capacity Semiconductor Device Package and Lead Frame with Large Area Connection Posts and Modified Outline
Patent: 6,476,481 →
Application: 09/103,035 →
Publication: US 2001/0054752
Process for Filling Deep Trenches with Polysilicon and Oxide
Patent: 6,054,365 →
Application: 09/114,546 →
Non Zero-Voltage Switching Protection Circuit
Patent: 5,973,943 →
Application: 09/122,699 →
Process for Manufacturing Planar Fast Recovery Diode Using Reduced Number of Masking Steps
Patent: 6,197,649 →
Application: 09/129,165 →
Semiconductor Process Integration of a Guard Ring Structure
Patent: 6,022,790 →
Application: 09/129,651 →
Lampo Ignition Detection
Patent: 6,300,777 →
Application: 09/139,743 →
Intentional Cross Conduction of Converter Circuit to Ignite High Ignition Voltage Loads
Patent: 6,021,055 →
Application: 09/160,078 →
Commonly Housed Diverse Semiconductor Device
Patent: 6,133,632 →
Application: 09/161,790 →
Tempsense Fet with Implanted Line of Diodes (Eps)
Patent: 6,133,616 →
Application: 09/165,541 →
Parallel and Interwoven Buck Converter for High Efficiency, Low Voltage Power Supply
Patent: 6,023,154 →
Application: 09/179,728 →
Mosgated Trench Type Power Semiconductor with Silicon Carbide Substrate and Increased Gate Breakdown Voltage and Reduced On-Resistance
Patent: 6,194,741 →
Application: 09/185,110 →
Co-Packaged Mos-Gated Device and Control Integrated Circuit
Patent: 6,184,585 →
Application: 09/191,951 →
Process for Manufacture of a P- Channel Mos Gated Device with Base Implant Through the Contact Window
Patent: 6,207,974 →
Application: 09/193,507 →
Adaptable Planar Module
Patent: 6,147,869 →
Application: 09/197,078 →
Strip Gate Poly Structure for Increased Channel Width and Reduced Gate Resistance
Patent: 6,144,067 →
Application: 09/197,939 →
Schottky Diode with Adjusted Barrier Height and Process for Its Manufacture
Patent: 6,184,564 →
Application: 09/221,627 →
Semiconductor Package
Patent: 6,040,626 →
Application: 09/225,153 →
Chip-Scale Package
Patent: 6,410,989 →
Application: 09/225,254 →
Fully Integrated Ballast Ic
Patent: 6,211,623 →
Application: 09/225,635 →
Top Heatsink for Igbt
Patent: 6,211,567 →
Application: 09/232,491 →
Low Voltage Rad Hard Mosfet and Process for Its Manufacture
Patent: 6,707,103 →
Application: 09/263,916 →
Linear Current Sensing Circuit for Motor Controller
Patent: 6,215,435 →
Application: 09/266,822 →
Crushable Bead on Lead Finger Side Surface to Improve Moldability
Patent: 6,078,098 →
Application: 09/271,141 →
P-Channel Trench Mosfet Structure
Patent: 7,462,910 →
Application: 09/292,186 →
Test Process and Apparatus for Testing Singulated Semiconductor Die
Patent: 6,246,251 →
Application: 09/298,659 →
Three Phase Scr Rectifier Bridge with Soft Start Control Ic
Patent: 6,038,155 →
Application: 09/302,777 →
High Current Capacity Semiconductor Device Housing
Patent: 6,255,722 →
Application: 09/327,025 →
Inductorless Ballast
Patent: 6,215,253 →
Application: 09/328,585 →
Dual Epitaxial Layer for High Voltage Vertical Conduction Power Mosfet Devices
Application: 09/329,156 →
Power Module
Application: 60/097,637 →
Semiconductor Package
Application: 60/101,810 →
Double Ended Converter
Application: 60/101,877 →
Ignition Circuit for Automotive High Intensity Discharge Lamps
Application: 60/104,095 →
Mosgated Device with Trench Structure and Remote Contact and Process for Its Manufacture
Application: 60/104,148 →
Three Phase Scr Rectifier Bridge with Soft Start Control Ic
Application: 60/107,110 →
Low Voltage Mosfet and Process for Its Manufacture and Circuit Application
Application: 60/107,700 →
Improved Power Module with Repositioned Positive and Neutral Terminals for Reduced Inductance and Capacitance
Application: 60/111,530 →
High Current Semiconductor Device Package with Plastic Housing Conductive Tab
Application: 60/112,326 →
Bridge Connected Switched Audio Amplifier for High Power Sound Card
Application: 60/113,638 →
Low on-Resistance High Voltage Mosgated Device and Process for Its Manufacture
Application: 60/113,641 →
Shoot-Through Prevention Circuit for Motor Controller Integrated Circuit Gate Driver
Application: 60/115,607 →
Half Bridge Module for Starter/Alternator
Application: 60/118,761 →
Electronic Single Switch Module
Application: 60/121,622 →
Insert- Type Cutting Blade for Ultrasonic Bonding Wire Termination
Application: 60/130,140 →
Method of Controlling High Side Devices Without Using Hvics
Application: 60/130,479 →
Method of Reducing Conducted Emi in Motor Drive Applications
Application: 60/130,480 →
Chip Scale Package
Application: 60/130,540 →
Circuit to Minimize Temperature Offset Drift in Current Sense Ic
Application: 60/130,648 →
Soft Shutdown Circuit for Motor Controller
Application: 60/132,006 →
Desaturation Short Circuit Protection for Motor Controller Inverter Circuit
Application: 60/132,007 →
Three Commonly Housed Diverse Semiconductor Dice
Application: 60/135,712 →
Integrated Radiation Hardened Power Mosfet and Schottky Diode
Application: 60/138,841 →
Related Assignments (19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. Aug 18, 1980
From: LIDOW ALEXANDER; HERMAN THOMAS
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003795/0660 →
Assignment of Assignors Interest. Nov 17, 1980
From: LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 003846/0649 →
Assignment of Assignors Interest. Nov 17, 1980
From: HERMAN THOMAS; LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003846/0693 →
Assignment of Assignors Interest. Nov 17, 1980
From: HERMAN THOMAS; LIDOW ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE.
Reel/Frame 003846/0694 →
Assignment of Assignors Interest. Apr 6, 1981
From: MEDDLES DENNIS
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 003876/0786 →
Assignment of Assignors Interest. Mar 8, 1982
From: GOULD, HERBERT J.
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 003980/0817 →
Assignment of Assignors Interest. Dec 21, 1982
From: HERMAN, THOMAS; WILLIAMS, OLIVER
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004078/0476 →
Assignment of Assignors Interest. Mar 21, 1983
From: LIDOW, ALEXANDER
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP. OF DE
Reel/Frame 004109/0124 →
Assignment of Assignors Interest. Sep 30, 1983
From: GOULD, HERBERT J.
To: INTERNATIONAL RECTIFIER CORPORATION, A DE CORP.
Reel/Frame 004181/0698 →
Assignment of Assignors Interest. Nov 25, 1983
From: INTERNATIONAL RECTIFIER CORPORATION
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP OF DE
Reel/Frame 004193/0844 →
Assignment of Assignors Interest. Feb 21, 1984
From: COLLINS, HOWARD W.
To: INTERNATIONAL RECTIFIER CORPORATION, A CORP OF DE
Reel/Frame 004232/0922 →
Assignment of Assignors Interest. Jul 17, 1985
From: KINZER, DANIEL M.
To: INTERNATIONAL RECTIFIER CORPORATION, 9220 SUNSET BOULEVARD, LOS ANGELES, CALIFORNIA, 90069, A CORP OF DE.
Reel/Frame 004440/0425 →
Assignment of Assignors Interest. Feb 19, 1986
From: CLEMENTE, STEFANO
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004551/0663 →
Assignment of Assignors Interest. Jan 8, 1987
From: KINZER, DANIEL M.; MERRILL, PERRY; SPRING, KYLE A.
To: INTERNATIONAL RECTIFIER CORPORATION A CORP OF DE
Reel/Frame 004659/0533 →
Assignment of Assignors Interest. Feb 13, 1987
From: ABRAMOWITZ, HOWARD M.; CARPENTER, JERRY R.; MEDDLES, DENNIS
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004691/0826 →
Assignment of Assignors Interest. May 27, 1987
From: KINZER, DANIEL M.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004715/0855 →
Security Interest Oct 26, 1987
From: INTERNATIONAL RECTIFIER CORPORATION A CORP. OF DE
To: CHRYSLER CAPITAL CORPORATION
Reel/Frame 004811/0260 →
Assignment of Assignors Interest. Feb 25, 1988
From: KINZER, DANIEL M.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 004845/0772 →
Release by Secured Party of a Security Agreement Recorded at Reel 4811 Frame 0260. Jun 9, 1992
From: CHRYSLER CAPITAL CORPORATION
To: INTERNATIONAL RECTIFIER CORPORATION A DE CORP.
Reel/Frame 006147/0448 →