Assignment of Assignors Interest.

Recorded: 1992-12-22 Pages: 2

Assignor

TAKEMURA, HISASHI

Executed: 1992-11-30

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME MINATO-KU,, TOKYO, JAPAN

Covered Property (1)

Method of Forming Bipolar Junction Transistor of Epitaxial Planar Type

Patent: 5,587,326 →

Application: 07/965,027 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.