Assignment of Assignor's Interest

Recorded: 1993-06-08 Pages: 2

Assignor

HAYASHI, JUN

Executed: 1993-03-26

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Vapor Phase Epitaxial Growth Method of a Compound Semiconductor

Patent: 5,360,760 →

Application: 08/039,749 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.