Assignment of Assignor's Interest

Recorded: 1995-06-01 Pages: 2

Assignors

HOSOBA, HIROYUKI

Executed: 1995-05-25

WATANABE, MASANORI

Executed: 1995-05-25

NAKAMURA, JUNICHI

Executed: 1995-05-25

Assignee

SHARP KABUSHIKI KAISHA

22-22, NAGAIKE-CHO, ABENO-KU, OSAKA, JAPAN

Covered Property (1)

Method of Producing a Compound Semiconductor Crystal Layer with a Steep Heterointerface

Patent: 5,498,568 →

Application: 08/456,870 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.