Patent Assignment
Reel/Frame 008380/0091
Assignment of Assignor's Interest
Recorded: 1996-12-19
Pages: 2
Assignor
ONO, ATSUKI
Executed: 1996-12-02
Assignee
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Semiconductor Device Having Shallow Impurity Region Without Short-Circuit Between Gate Electrode and Source and Drain Regions and Process of Fabrication Thereof
Patent:
5,780,896 →
Application:
08/769,423 →
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.