Assignment of Assignor's Interest

Recorded: 1997-11-12 Pages: 3

Assignors

HONG, GARY

Executed: 1997-10-13

WANG, PATRICK

Executed: 1997-10-14

TING, WENCHI

Executed: 1997-10-13

Assignee

UNITED SEMICONDUCTOR CORP.

SCIENCE-BASED INDUSTRIAL PARK, NO. 3, LI-HSIN II RD., HSINCHU CITY, R.O.C, TAIWAN

Covered Property (1)

Flash Memory Cell Structure Having a High Gate-Coupling Coefficient and a Select Gate

Patent: 5,852,313 →

Application: 08/967,940 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.