Patent Assignment
Reel/Frame 008941/0043
Assignment of Assignor's Interest
Recorded: 1997-12-18
Pages: 3
Assignee
UNITED SEMICONDUCTOR CORP.
SCIENCE-BASED INDUSTRIAL PARK, NO. 3, LI-HSIN II RD., HSINCHU CITY, R.O.C, TAIWAN
Covered Property
(1)
Method for Forming Etox Cell Using Self-Aligned Source Etching Process
Patent:
6,096,624 →
Application:
08/992,884 →
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.