Assignment of Assignor's Interest

Recorded: 1997-12-29 Pages: 3

Assignor

HONG, GARY

Executed: 1997-12-09

Assignee

UNITED SEMICONDUCTOR CORP.

NO. 3, LI-HSIN RD. II, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, R.O.C, TAIWAN

Covered Property (1)

Method of Manufacturing a Flash Memory Cell Having a Tunnel Oxide with a Long Narrow Top Profile

Patent: 5,972,752 →

Application: 08/998,725 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.