Patent Assignment
Reel/Frame 010770/0340
Assignment of Assignor's Interest
Recorded: 2000-04-28
Pages: 2
Assignors
HAMANAKA, NOBUAKI
Executed: 2000-04-26
INOUE, KEN
Executed: 2000-04-26
MIKAGI, KAORU
Executed: 2000-04-26
Assignee
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Method for Forming a Refractory-Metal-Silicide Layer in a Semiconductor Device
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.