Assignment of Assignor's Interest

Recorded: 2001-01-10 Pages: 2

Assignor

MATSUDA, TOMOKO

Executed: 2001-01-04

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Method of Forming N-Channel and P-Channel Mos Field Effect Transistors Over a Single Semiconductor Substrate

Application: 09/756,744 →

Publication: US 2001/0034095

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.