Patent Application
Utility
App. No. 09/756,744
· Confirmation No. 6830
METHOD OF FORMING N-CHANNEL AND P-CHANNEL MOS FIELD EFFECT TRANSISTORS OVER A SINGLE SEMICONDUCTOR SUBSTRATE
Inventor:
Tomoko Matsuda
Abandoned -- Failure to Respond to an Office Action
View Publication ↗
|
⬇ PDF
|
Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-03-16 | DRW |
Drawings-only black and white line drawings | 19 | View | |
| 2001-01-10 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-01-10 | ADS |
Application Data Sheet | 1 | View | |
| 2001-01-10 | SPEC |
Specification | 39 | View | |
| 2001-01-10 | CLM |
Claims | 3 | View | |
| 2001-01-10 | ABST |
Abstract | 1 | View | |
| 2001-01-10 | DRW |
Drawings-only black and white line drawings | 19 | View | |
| 2001-01-10 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Tomoko Matsuda
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/480
Prosecution
- Examiner
- RAO, SHRINIVAS H
- Art Unit
- 2814
- Customer No.
- 466
- Docket No.
- PF-2753
- Confirmation No.
- 6830
Foreign Priority
2000-002973
·
2000-01-11
·
JAPAN
Publication
- Pub. No.
- US20010034095A1
- Pub. Date
- 2001-10-25
No related applications found.
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-06-17
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this application's details
Quick Facts
- App. No.
- 09/756,744
- Filed
- 2001-01-10
- Pub. No.
- US20010034095A1
- Examiner
- RAO, SHRINIVAS H
- Art Unit
- 2814
External Links