Patent Assignment
Reel/Frame 011469/0650
Assignment of Assignor's Interest
Recorded: 2001-01-19
Received: 2001-02-01
Pages: 2
Assignor
MIWA, KIYOTAKA
Executed: 2001-01-18
Assignee
NEC CORPORATION
7-1 SHIBA 5 CHOME, MINATO-KU, TOKYO, JPX, JAPAN
Covered Property
(1)
Method for Forming a Shallow Trench Isolation Structure in a Semiconductor Device
Application:
09/766,206 →