Assignment of Assignor's Interest

Recorded: 2001-04-04 Received: 2001-04-16 Pages: 3

Assignors

ANDO, KOICHI

Executed: 2001-03-23

KOYAMA, SHIN

Executed: 2001-03-23

MAKABE, MARIKO

Executed: 2001-03-23

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JPX, JAPAN

Covered Property (1)

High-Performance Mos Transistor of Ldd Structure Having a Gate Insulating Film with a Nitride Central Portion and Oxide End Portions

Application: 09/824,672 →