IP Library Patent Application 09824672
Patent Application Utility
App. No. 09/824,672 · Confirmation No. 1906

HIGH-PERFORMANCE MOS TRANSISTOR OF LDD STRUCTURE HAVING A GATE INSULATING FILM WITH A NITRIDE CENTRAL PORTION AND OXIDE END PORTIONS

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Code Description Pages PDF
2003-07-02 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-04-04 TRNA Transmittal of New Application 4 View
2001-04-04 SPEC Specification 30 View
2001-04-04 CLM Claims 6 View
2001-04-04 ABST Abstract 1 View
2001-04-04 DRW Drawings-only black and white line drawings 9 View
2001-04-04 OATH Oath or Declaration filed 2 View
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Quick Facts
App. No.
09/824,672
Filed
2001-04-04
Granted
2003-09-02
Pub. No.
US20010028086A1
Examiner
ROMAN, ANGEL
Art Unit
2812
PTA
0 days