Patent Assignment
Reel/Frame 013795/0980
Assignment of Assignor's Interest
Recorded: 2003-02-27
Received: 2003-03-04
Pages: 8
Assignor
NEC CORPORATION
Executed: 2002-11-01
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, JPX, 211-8668, JAPAN
Covered Property
(1)
High-Performance Mos Transistor of Ldd Structure Having a Gate Insulating Film with a Nitride Central Portion and Oxide End Portions
Application:
09/824,672 →