Patent Assignment
Reel/Frame 011839/0379
Assignment of Assignor's Interest
Recorded: 2001-05-24
Received: 2001-06-01
Pages: 3
Assignor
HWANG, LEE-YEUN
Executed: 2001-05-07
Assignee
HYNIX SEMICONDUCTOR, INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHON-SHI, KYOUNGKI-DO, KRX, KOREA, REPUBLIC OF
Covered Property
(1)
High Voltage Device Having Polysilicon Region in Trench and Fabricating Method Thereof
Application:
09/863,452 →