IP Library Granted Patent US 6,706,567
Granted Patent Utility
US 6,706,567 · Confirmation No. 9832

HIGH VOLTAGE DEVICE HAVING POLYSILICON REGION IN TRENCH AND FABRICATING METHOD THEREOF

Inventor: Lee-Yeun Hwang
⬇ PDF
Code Description Pages PDF
2014-11-25 OATH Oath or Declaration filed 56 View
2004-01-30 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-05-24 TRNA Transmittal of New Application 4 View
2001-05-24 SPEC Specification 10 View
2001-05-24 CLM Claims 8 View
2001-05-24 ABST Abstract 1 View
2001-05-24 DRW Drawings-only black and white line drawings 4 View
2001-05-24 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,706,567
App. No.
09/863,452
Filed
2001-05-24
Granted
2004-03-16
Pub. No.
US20020013029A1
Art Unit
2813
PTA
-20 days