Assignment of Assignor's Interest

Recorded: 2001-06-21 Received: 2001-06-28 Pages: 3

Assignors

MIN, GYUNG-JIN

Executed: 2001-06-06

PARK, WAN-JAE

Executed: 2001-06-06

JEON, JEONG-SIC

Executed: 2001-06-07

Assignee

SAMSUNG ELECTRONICS CO., LTD.

416, MAETAN-DONG, PALDAL-GU, SUWON-CITY, KYUNGKI-DO, KRX, KOREA, REPUBLIC OF

Covered Property (1)

Method of Forming Interlevel Dielectric Layer of Semiconductor Device

Application: 09/885,091 →