Assignment of Assignor's Interest

Recorded: 2001-06-27 Received: 2001-07-10 Pages: 3

Assignor

HASHIMOTO, SHINGO

Executed: 2001-06-20

Assignee

NEC CORPORATION

7-1, SHIBA 4-CHOME, MINATO-KU, TOKYO, JPX, JAPAN

Covered Properties (2)

Load-Less Four-Transistor Memory Cell with Different Gate Insulation Thicknesses for N-Channel Drive Transistors and P-Channel Access Transistors

Application: 09/894,177 →

Formation of Opitcal Components on a Substrate

Application: 09/785,565 →