Patent Application
Utility
App. No. 09/894,177
· Confirmation No. 5323
LOAD-LESS FOUR-TRANSISTOR MEMORY CELL WITH DIFFERENT GATE INSULATION THICKNESSES FOR N-CHANNEL DRIVE TRANSISTORS AND P-CHANNEL ACCESS TRANSISTORS
Inventor:
Shingo Hashimoto
Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-06-27 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-06-27 | SPEC |
Specification | 21 | View | |
| 2001-06-27 | CLM |
Claims | 3 | View | |
| 2001-06-27 | ABST |
Abstract | 1 | View | |
| 2001-06-27 | DRW |
Drawings-only black and white line drawings | 13 | View | |
| 2001-06-27 | OATH |
Oath or Declaration filed | 1 | View |
Inventors
Shingo Hashimoto
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
365/156
G11C11/41
G11C11/412
H10B10/00
Prosecution
- Examiner
- TRAN, ANDREW Q
- Art Unit
- 2824
- Customer No.
- 26304
- Docket No.
- NECN 18.771
- Confirmation No.
- 5323
Foreign Priority
2000-196175
·
2000-06-29
·
JAPAN
Publication
- Pub. No.
- US20020001221A1
- Pub. Date
- 2002-01-03
Patent Term Adjustment
0days
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-02-25
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Quick Facts
- App. No.
- 09/894,177
- Filed
- 2001-06-27
- Granted
- 2002-08-27
- Pub. No.
- US20020001221A1
- Examiner
- TRAN, ANDREW Q
- Art Unit
- 2824
- PTA
- 0 days
External Links