Patent Assignment
Reel/Frame 025486/0443
Change of Name
Recorded: 2010-12-13
Received: 2010-12-13
Pages: 9
Assignor
NEC ELECTRONICS CORPORATION
Executed: 2010-04-01
Assignee
RENESAS ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU,, KAWASAKI-SHI, KANAGAWA, JPX, 211-8668, JAPAN
Covered Properties
(92)
Method of and Apparatus for Designing Eb Mask
Application:
09/956,143 →
Method of Forming a Trench Isolation
Application:
09/956,142 →
Non-Volatile Semiconductor Memory Device with Magnetic Memory Cell Array
Application:
09/954,267 →
Output Buffer Circuit
Application:
09/952,426 →
Etching Method
Application:
09/950,769 →
Processing Apparatus Having Particle Counter and Cleaning Device, Cleaning Method, Cleanliness Diagnosis Method and Semiconductor Fabricating Apparatus Using the Same
Application:
09/950,748 →
Cmos Image Sensor and Manufacturing Method Thereof
Application:
09/947,343 →
Mos Linear Transconductance Amplifier
Application:
09/946,753 →
Nitride Based Semiconductor Light-Emitting Device
Application:
09/944,186 →
Semiconductor Device with an Improved Bonding Pad Structure and Method of Bonding Bonding Wires to Bonding Pads
Application:
09/942,729 →
Semiconductor Device with Uneven Metal Plate to Improve Adhesion to Molding Compound
Application:
09/941,744 →
Semiconductor Device in a Resin Sealed Package with a Radiating Plate and Manufacturing Method Thereof
Application:
09/942,445 →
Charge Transfer Device
Application:
09/942,143 →
Linear Voltage Subtractor/Adder Circuit and Mos Differential Amplifier Circuit Therefor
Application:
09/940,472 →
Power Controller and Power Controlling Method
Application:
09/940,656 →
Semiconductor Device Package Having a Switcher Connecting Plural Processing Elements
Application:
09/939,672 →
Output Interface Circuit
Application:
09/940,056 →
Semiconductor Integrated Circuit Device and Method for Designing the Same
Application:
09/939,870 →
Method for Forming a Silicide Layer
Application:
09/940,247 →
Sense Amplifier Circuit and Semiconductor Storage Device
Application:
09/938,773 →
Sense Amplifier Circuit and Semiconductor Storage Device
Application:
09/938,968 →
Semiconductor Circuit with a Stabilized Gain Slope
Application:
09/933,751 →
Semiconductor Circuit with a Stabilized Gain Slope
Application:
09/933,809 →
Semiconductor circuit with a stabilized gain slope
Application:
09/933,808 →
Semiconductor Laser and System for and Method of Performing Digital Optical Communications Using Such Semiconductor Laser
Application:
09/928,663 →
Lead Frame, Semiconductor Device Produced by Using the Same and Method of Producing the Semiconductor Device
Application:
09/923,394 →
Delay Circuit and Method
Application:
09/923,997 →
Microcomputer
Application:
09/922,950 →
Pll Circuit with Shortened Lock-Up Time
Application:
09/921,625 →
Digital Phase Control Using First and Second Delay Lines
Application:
09/921,866 →
Semiconductor Device and Method for Manufacturing the Same That Includes a Dual Oxidation
Application:
09/919,921 →
Method of Fabricating Semiconductor Device Having Trench Interconnection
Application:
09/921,050 →
Semiconductor Device
Application:
09/919,117 →
Semiconductor Device Having a U-Shaped Groove in the Body of the Device
Application:
09/916,298 →
Clock Control Method and Circuit
Application:
09/915,542 →
Clock Control Method and Circuit
Application:
09/915,556 →
Clock Control Method and Circuit
Application:
09/915,283 →
Clock Control Method and Circuit
Application:
09/915,541 →
Display Device
Application:
09/912,491 →
Semiconductor Device, a Charge Pump Circuit and a Pll Circuit That Can Suppress a Switching Noise
Application:
09/915,725 →
Semiconductor Wafer, Semiconductor Device and Manufacturing Method Therefor
Application:
09/916,837 →
Non-Volatile Memory Device
Application:
09/911,709 →
Semiconductor Memory Device Having Ecc Type Error Recovery Circuit
Application:
09/910,915 →
Fingerprint Authentication Apparatus
Application:
09/912,082 →
Semiconductor Integrated Circuit Device with Level Shift Circuit
Application:
09/912,034 →
Drive Circuits for a Magnetic Recording Device
Application:
09/909,802 →
Manufacturing Method of System-on-Chip and Manufacturing Method of Semiconductor Device
Application:
09/910,039 →
A Method of Manufacturing a Multi-Level Interconnection Structure
Application:
09/910,994 →
Nonvolatile Semiconductor Device Having a Memory Cells Each of Which Is Constituted of a Memory Transistor and a Selection Transistor
Application:
09/908,940 →
Clock Controlling Method and Circuit
Application:
09/910,117 →
Capacitor Electrode Having Uneven Surface Formed by Using Hemispherical Grained Silicon
Application:
09/908,958 →
Active-Matrix Type Display Device
Application:
09/906,996 →
Reticle System for Measurement of Effective Coherence Factors
Application:
09/907,039 →
Solid State Image Pick-Up Device
Application:
09/907,036 →
Semiconductor Device Having Capacitive Element Structure and Multilevel Interconnection Structure and Method of Fabricating the Same
Application:
09/902,608 →
Slew Rate Adjusting Circuit
Application:
09/904,283 →
Semiconductor Integrated Circuit Including a Plurality of Macros That Can Be Operated Although Their Operational Voltages Are Different from Each Other
Application:
09/902,842 →
Pll System for Crt Monitor
Application:
09/901,726 →
Clock period sensing circuit
Application:
09/901,062 →
Apparatus and Method for Image Compression Using a Specified Restart Interval
Application:
09/900,607 →
Semiconductor Device Having Definite Size of Input/Output Blocks and Its Designing Method
Application:
09/899,351 →
Low Power Consuming Circuit
Application:
09/898,979 →
Semiconductor Circuit in Which Power Consumption Is Reduced and Semiconductor Circuit System Using the Same
Application:
09/893,598 →
Liquid Crystal Display Module Capable of Avoiding Generation of Rib-Like Patterns
Application:
09/894,361 →
Method of Designing Semiconductor Device and Method of Manufacturing Semiconductor Device
Application:
09/894,405 →
Fabrication Process for a Semiconductor Device with Damascene Interconnect Lines of the Same Level Separated by Insulators with Different Dielectric Constants
Application:
09/893,926 →
Multilayered wiring structure and method of manufacturing the same
Application:
09/891,415 →
Comparator and a Control Circuit for a Power Mosfet
Application:
09/891,236 →
Load-Less Four-Transistor Memory Cell with Different Gate Insulation Thicknesses for N-Channel Drive Transistors and P-Channel Access Transistors
Application:
09/894,177 →
Digital / Analog Converter Including Mos Transistor Type Current Switches
Application:
09/888,436 →
Apparatus for Cleaning Semiconductor Device
Application:
09/888,565 →
Variable Gain Amplifier
Application:
09/888,179 →
Input Circuit and Output Circuit
Application:
09/886,715 →
Drive Circuit for Driving an Image Display Unit
Application:
09/884,942 →
Data Transfer Control Method and Controller for Universal Serial Bus Interface
Application:
09/884,128 →
Semiconductor Device and Method and Apparatus for Manufacturing the Same
Application:
09/883,370 →
High Integration-Capable Output Buffer Circuit Unaffected by Manufacturing Process Fluctuations or Changes in Use
Application:
09/884,757 →
Semiconductor Device with Stack Electrode Formed Using Hsg Growth
Application:
09/882,253 →
Method for Forming Aluminum Interconnection
Application:
09/885,343 →
Electrostatic Discharge Protection Circuit
Application:
09/880,034 →
Semiconductor Memory Device Improving Data Read-Out Access
Application:
09/880,469 →
Reference Voltage Supply Circuit Having Reduced Dispersion of an Output Voltage
Application:
09/878,972 →
Mask Rom Semiconductor Memory Device Capable of Synchronizing the Activation of the Sense Amplfier and of the Word Line
Application:
09/878,379 →
Semiconductor Device with Semiconductor Chip on Flexible Tape
Application:
09/878,197 →
Method of Fabrication of Multilayersemiconductor Wiring Structure with Reduced Alignment Mark Area
Application:
09/877,179 →
Method for Controlling a Flash Memory Erase Operation and Flash Memory Erase Operation Controller
Application:
09/877,940 →
Semiconductor device
Application:
09/876,396 →
Method of Manufacturing Semiconductor Device Having Memory Cell Transistors
Application:
09/875,050 →
Clock Signal Reproduction Device
Application:
09/876,586 →
Method of Manufacturing Semiconductor Device
Application:
09/876,207 →
Variable Drive Current Driver Circuit
Application:
09/874,737 →
Virtual Ground Semiconductor Memory Device
Application:
09/873,343 →