Semiconductor device and method and apparatus for manufacturing the same
View Patent ↗In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.
1. A semiconductor interconnect structure comprising:
a substrate;
a first insulating film directly on said substrate;
a first interconnect through said first insulating film and directly contacting said substrate, said first interconnect comprising a trench having a metal barrier layer on walls and a bottom of said trench and a copper layer within said trench;
a first diffusion barrier film directly on said first insulating film, said first diffusion barrier film suppressing aggregation of copper and preventing diffusion of copper;
a second diffusion barrier film directly on said first diffusion barrier film, said second diffusion barrier film being an etch stop layer;
a second insulating film directly on said second diffusion barrier film; and
a second interconnect through said first and second diffusion barrier films and said second insulating film, said second interconnect comprising a trench having a metal barrier layer on walls and a bottom of said trench and a copper layer within said trench.
2. The interconnect structure as claimed in claim 1 , wherein said first and second interconnects are axially aligned.
3. The interconnect structure as claimed in claim 1 , wherein said first diffusion barrier film and said bottom of said second interconnect are coplanar.
4. The interconnect structure as claimed in claim 1 , wherein said bottom of said second interconnect contacts said walls of said first interconnect.
5. The interconnect structure as claimed in claim 1 , wherein said first and second diffusion barrier films are different.
6. The interconnect structure as claimed in claim 1 , wherein said first and second diffusion barrier films are the same and have different thicknesses.
7. The interconnect structure as claimed in claim 1 , wherein the metal barrier layer on the walls of the first interconnect and the metal barrier layer on the walls of the second interconnect are aligned.
8. The interconnect structure as claimed in claim 1 , wherein a bottom of said metal barrier layer of said first interconnect directly contacts an end of said walls of said metal barrier layer of said second interconnect.