Patent Assignment
Reel/Frame 013774/0295
Assignment of Assignor's Interest
Recorded: 2003-02-25
Received: 2003-02-28
Pages: 30
Assignor
NEC CORPORATION
Executed: 2002-11-01
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA 211-8668, JPX, JAPAN
Covered Properties
(92)
Split Gate Flash Memory with Virtual Ground Array Structure and Method of Fabricating the Same
Application:
10/029,275 →
Chemically Amplified Resist Compositions
Application:
09/988,682 →
Operational Amplifier
Application:
10/007,466 →
Receiver Circuit for a Complementary Signal
Application:
09/975,440 →
Semiconductor Integrated Circuit
Application:
09/971,227 →
Semiconductor Device and Method for Manufacturing Same
Application:
09/961,317 →
Delay Locked Loop Circuit for Synchronizing Internal Supply Clock with Reference Clock
Application:
09/962,546 →
Power Controller and Power Controlling Method
Application:
09/940,656 →
Output Interface Circuit
Application:
09/940,056 →
Sense Amplifier Circuit and Semiconductor Storage Device
Application:
09/938,773 →
Sense Amplifier Circuit and Semiconductor Storage Device
Application:
09/938,968 →
Method for Drying a Semiconductor Wafer, a Mixture for Drying, and a Dryer
Application:
09/929,586 →
Linear Transconductance Amplifier
Application:
09/924,625 →
Semiconductor Device
Application:
09/919,117 →
Semiconductor Device Having a U-Shaped Groove in the Body of the Device
Application:
09/916,298 →
Clock Control Method and Circuit
Application:
09/915,542 →
Clock Control Method and Circuit
Application:
09/915,541 →
Drive Circuits for a Magnetic Recording Device
Application:
09/909,802 →
Semiconductor Device and Method for Making the Same
Application:
09/903,144 →
Method for Manufacturing a Multilayer Interconnection Structure
Application:
09/901,682 →
Semiconductor Device Capable of Improving Manufacturing
Application:
09/902,259 →
Clock period sensing circuit
Application:
09/901,062 →
Load-Less Four-Transistor Memory Cell with Different Gate Insulation Thicknesses for N-Channel Drive Transistors and P-Channel Access Transistors
Application:
09/894,177 →
Input Circuit and Output Circuit
Application:
09/886,715 →
Semiconductor device and method for manufacturing the same
Application:
09/886,705 →
Method for Forming Aluminum Interconnection
Application:
09/885,343 →
Spindle Motor Drive Circuit
Application:
09/879,951 →
Mask Rom Semiconductor Memory Device Capable of Synchronizing the Activation of the Sense Amplfier and of the Word Line
Application:
09/878,379 →
Method of Manufacturing a Semiconductor Device
Application:
09/878,893 →
Semiconductor Device Having Improved Parasitic Capacitance and Mechanical Strength
Application:
09/876,998 →
Production of a semiconductor device
Application:
09/876,072 →
Method for Controlling a Flash Memory Erase Operation and Flash Memory Erase Operation Controller
Application:
09/877,940 →
Memory with High Speed Reading Operation Using a Switchable Reference Matrix Ensuring Charging Speed
Application:
09/875,201 →
Method of Manufacturing Semiconductor Device Having Memory Cell Transistors
Application:
09/875,050 →
Semiconductor memory device
Application:
09/866,893 →
Wiring Structure of Semiconductor Device
Application:
09/864,255 →
Output Circuit Converting an Internal Power Supply Potential into an External Supply Potential in a SEMICONDUCT0R Apparatus.
Application:
09/859,632 →
Semiconductor Device with a Corrosion Resistant Bonding Pad and Manufacturing Method Therefor
Application:
09/855,720 →
Variable Delay Circuit Having a Ramp Voltage Generating Unit
Application:
09/853,788 →
Lapping method and method for manufacturing lapping particles for use in the lapping method
Application:
09/848,331 →
Oversampling Clock Recovery Circuit
Application:
09/847,311 →
Method for Fabrication Semiconductor Device Having Trench Isolation Structure
Application:
09/845,306 →
Pellicle and Storage Case Therefor Having Chemical Traps
Application:
09/842,144 →
Single-Layer-Electrode Type Two-Phase Charge Coupled Device Having Smooth Charge Transfer
Application:
09/842,999 →
Semiconductor Storage Device Data Sensing Method and Apparatus
Application:
09/844,238 →
Method for Manufacturing Semiconductor Memory and Method for Manufacturing Capacitor
Application:
09/842,751 →
Semiconductor Device Formed with Metal Wiring on a Wafer by Chemical Mechanical Polishing, and Method of Manufacturing the Same
Application:
09/840,761 →
Method of Manufacturing Semiconductor Device
Application:
09/840,578 →
Semiconductor Device
Application:
09/840,586 →
Scan Flip-Flop Circuit Having Scan Logic Output Terminal Dedicated to Scan Test
Application:
09/839,297 →
Charge Transfer Device and Solid Image Pickup Apparatus Using the Same
Application:
09/839,068 →
High contrast ratio membrane mask
Application:
09/837,848 →
Substrate-Cleaning Method and Substrate-Cleaning Solution
Application:
09/835,412 →
Jitter Detecting Circuit for Detecting Cycle-to-Cycle Jitter
Application:
09/836,688 →
Dry Etching System for Patterning Target Layer at High Reproducibility and Method of Dry Etching Used Therein
Application:
09/836,649 →
Circuit Manufacturing Method and Apparatus, Anneal Control Method and Apparatus, Information Storage Medium
Application:
09/834,032 →
Semiconductor Package and Semiconductor Package Fabrication Method
Application:
09/832,095 →
Method for Making Semiconductor Device Having Bent Gate Electrode
Application:
09/828,873 →
Semiconductor Device and Manufacturing Method Therefor
Application:
09/829,555 →
Semiconductor Wafer Accommodating Jig, Handling Method and Production System
Application:
09/827,931 →
Drying apparatus and method
Application:
09/827,857 →
Duty Cycle Discriminating Circuit Having Variable Threshold Point
Application:
09/822,419 →
Electron Beam Exposure Mask and Pattern Designing Method Thereof
Application:
09/819,806 →
Semiconductor Memory Apparatus That Can Surely Attain Discharge Operation While Reducing Discharge Period When Reading Operation Is Done
Application:
09/817,049 →
MIM capacitor having reduced capacitance error and phase rotation
Application:
09/817,045 →
Semiconductor Wafer Having a Bank on a Scribe Line
Application:
09/816,229 →
Semiconductor Device Having Capacitor Which Assures Sufficient Capacity Without Requiring Large Space and Method of Producing the Same
Application:
09/815,841 →
Clock control circuit and clock control method
Application:
09/815,846 →
Method for Forming Element Isolating Region
Application:
09/812,876 →
Clock Period Sensing Circuit
Application:
09/810,203 →
Integrated Circuit Device with Mim Capacitance Circuit
Application:
09/805,479 →
Flip Chip Type Semiconductor Device and Method for Manufacturing the Same
Application:
09/801,901 →
Field effect transistor having comb-shaped lead-out electrodes capable of reducing parasitic capacitance therebetween
Application:
09/800,149 →
High Speed and Low Parasitic Capacitance Semiconductor Device and Method for Fabricating the Same
Application:
09/791,800 →
Ic Socket for Surface-Monuting Semiconductor Device
Application:
09/789,963 →
Semiconductor device having high breakdown voltage
Application:
09/789,672 →
Logic Circuits Used for Address Decoding
Application:
09/789,136 →
Semiconductor Device
Application:
09/783,431 →
Semiconductor Device
Application:
09/783,107 →
Semiconductor Device
Application:
09/781,252 →
Nonvolatile Semiconductor Memory Device
Application:
09/781,829 →
Schmitt Trigger Circuit Having Independent Threshold Voltage Setting to Provide Hysteresis
Application:
09/778,441 →
Method of Controlling a Clock Signal and Circuit for Controlling a Clock Signal
Application:
09/777,331 →
Semiconductor memory device and manufacturing method of the same
Application:
09/772,981 →
Semiconductor Memory Device
Application:
09/769,547 →
Semiconductor Memory and Manufacturing Method Thereof
Application:
09/767,568 →
Semiconductor device and manufacturing method thereof
Application:
09/765,359 →
Semiconductor device and method for producing same
Application:
09/764,055 →
Method for Forming a Shallow Trench Isolation Structure in a Semiconductor Device
Application:
09/766,206 →
Method for forming a bottom electrode of a storage capacitor
Application:
09/761,692 →
Method of Producing an Optical Semiconductor Device Having a Waveguide Layer Buried in an Inp Current Blocking Layer
Application:
09/756,117 →
Semiconductor Device
Application:
09/753,883 →