IP Library Granted Patent US 6,436,781
Granted Patent Utility
US 6,436,781 · Confirmation No. 2005

HIGH SPEED AND LOW PARASITIC CAPACITANCE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Inventor: Fumihiko Sato
⬇ PDF
Code Description Pages PDF
2020-06-11 OATH Oath or Declaration filed 262 View
2001-02-26 TRNA Transmittal of New Application 4 View
2001-02-26 A.PE Preliminary Amendment 4 View
2001-02-26 SPEC Specification 30 View
2001-02-26 CLM Claims 2 View
2001-02-26 ABST Abstract 1 View
2001-02-26 DRW Drawings-only black and white line drawings 19 View
2001-02-26 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,436,781
App. No.
09/791,800
Filed
2001-02-26
Granted
2002-08-20
Pub. No.
US20010009793A1
Examiner
LEE, CALVIN
Art Unit
2825
PTA
-9 days