Patent Assignment
Reel/Frame 011976/0698
Assignment of Assignor's Interest
Recorded: 2001-07-02
Received: 2001-07-19
Pages: 3
Assignor
EVANS, IVOR
Executed: 2001-03-20
Assignee
EUROPEAN SEMICONDUCTOR MANUFACTURING LIMITED
CARDIFF RD, DUFFRYN, NEWPORT, SOUTH WALES, NP108YJ, GBX, UNITED KINGDOM
Covered Property
(1)
Method of integrating the fabrication of a diffused shallow well N type JFET device and a P channel MOSFET device
Application:
09/895,100 →