Patent Application
Utility
App. No. 09/895,100
· Confirmation No. 6732
Method of integrating the fabrication of a diffused shallow well N type JFET device and a P channel MOSFET device
Inventor:
Ivor Evans
Abandoned -- Failure to Respond to an Office Action
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-07-02 | TRNA |
Transmittal of New Application | 1 | View | |
| 2001-07-02 | SPEC |
Specification | 9 | View | |
| 2001-07-02 | CLM |
Claims | 6 | View | |
| 2001-07-02 | ABST |
Abstract | 1 | View | |
| 2001-07-02 | DRW |
Drawings-only black and white line drawings | 10 | View | |
| 2001-07-02 | OATH |
Oath or Declaration filed | 1 | View |
Inventors
Ivor Evans
Newport, UNITED KINGDOM
Attorneys & Agents of Record
Classification
USPC
438/186
H10D84/87
H10D84/80
H10D84/0156
H10D84/038
H10D84/40
Prosecution
- Examiner
- ANYA, IGWE U
- Art Unit
- 2825
- Docket No.
- ESM00-026
- Confirmation No.
- 6732
Foreign Priority
0115251.1
·
2001-06-21
·
UNITED KINGDOM
Publication
- Pub. No.
- US20020197779A1
- Pub. Date
- 2002-12-26
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-10-21
from
EVANS, IVOR
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-07-02
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Quick Facts
- App. No.
- 09/895,100
- Filed
- 2001-07-02
- Pub. No.
- US20020197779A1
- Examiner
- ANYA, IGWE U
- Art Unit
- 2825
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