Patent Assignment
Reel/Frame 012269/0490
Assignment of Assignor's Interest
Recorded: 2001-10-12
Pages: 3
Assignor
TSENG, HORNG-HUEI
Executed: 2001-10-02
Assignee
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
SCIENCE-BASED INDUSTRIAL PARK, 123, PARK AVE-3RD, HSINCHU, R.O.C, TAIWAN
Covered Property
(1)
Method of Manufacturing a High Coupling Ratio Stacked Gate Flash Memory with an Hsg-Si Layer