Patent Assignment
Reel/Frame 012358/0274
Assignment of Assignor's Interest
Recorded: 2001-12-04
Received: 2001-12-14
Pages: 3
Assignee
UNITED MICROELECTRONICS CORP.
SCIENCE-BASED INDUSTRIAL PARK, NO.3, LI-HSIN RD. II, HSINCHU, TWX, R.O.C, TAIWAN
Covered Property
(1)
Method of Manufacturing Mos Transistor with Fluorine Implantation at a Low Energy
Application:
10/004,635 →