IP Library Granted Patent US 6,534,354
Granted Patent Utility
US 6,534,354 · Confirmation No. 6788

METHOD OF MANUFACTURING MOS TRANSISTOR WITH FLUORINE IMPLANTATION AT A LOW ENERGY

Patented Case View Patent ↗
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Code Description Pages PDF
2001-12-04 TRNA Transmittal of New Application 2 View
2001-12-04 SPEC Specification 7 View
2001-12-04 CLM Claims 3 View
2001-12-04 ABST Abstract 1 View
2001-12-04 DRW Drawings-only black and white line drawings 4 View
2001-12-04 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,534,354
App. No.
10/004,635
Filed
2001-12-04
Granted
2003-03-18
Art Unit
2813
PTA
0 days