Granted Patent
Utility
US 6,569,726
· Confirmation No. 1655
METHOD OF MANUFACTURING MOS TRANSISTOR WITH FLUORIDE IMPLANTATION ON SILICON NITRIDE ETCHING STOP LAYER
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2002-05-22 | TRNA |
Transmittal of New Application | 2 | View | |
| 2002-05-22 | A.PE |
Preliminary Amendment | 2 | View | |
| 2002-05-22 | SPEC |
Specification | 7 | View | |
| 2002-05-22 | CLM |
Claims | 3 | View | |
| 2002-05-22 | ABST |
Abstract | 1 | View | |
| 2002-05-22 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2002-05-22 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Tong-Hsin Lee
Taipei Hsien, TAIWAN
Terry Chung-Yi Chen
Taipei Hsien, TAIWAN
Attorneys & Agents of Record
Classification
USPC
438/200
H10D30/0212
H10B10/00
H10P30/20
Y10S438/919
Prosecution
- Examiner
- HUYNH, YENNHU B
- Art Unit
- 2813
- Docket No.
- JCLA7944-D
- Confirmation No.
- 1655
Foreign Priority
90128570
·
2001-11-19
·
TAIWAN
Publication
- Pub. No.
- US20030096483A1
- Pub. Date
- 2003-05-22
Patent Term Adjustment
0days
No recorded assignments were found for this patent.
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Quick Facts
- Patent No.
- US 6,569,726
- App. No.
- 10/154,604
- Filed
- 2002-05-22
- Granted
- 2003-05-27
- Pub. No.
- US20030096483A1
- Examiner
- HUYNH, YENNHU B
- Art Unit
- 2813
- PTA
- 0 days
External Links