Patent Assignment
Reel/Frame 012387/0265
Assignment of Assignor's Interest
Recorded: 2001-12-17
Pages: 2
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1 AMI-RI, BUBAL-EUB, KYOUNGKI-DO, ICHON-SHI, 467-8, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Manufacturing a Ferroelectric Memory Device
Patent:
6,410,345 →
Application:
09/975,086 →
Related Assignments
(5)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Jan 10, 2005
From: HYNIX SEMICONDUCTOR, INC.
To: MAGNACHIP SEMICONDUCTOR, LTD.
Reel/Frame 016216/0649 →
Security Interest
Mar 25, 2005
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL TRUSTEE
Reel/Frame 016470/0530 →
Release of Security Interest
Jun 22, 2010
From: U.S. BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 024563/0807 →
Corrective Assignment to Correct the Receiving Party Address Previously Recorded at Reel: 024563 Frame: 0807. Assignor(S) Hereby Confirms the Release by Secured Party.
Nov 25, 2014
From: US BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 034469/0001 →
Assignment of Assignor's Interest
Jan 18, 2019
From: MAGNACHIP SEMICONDUCTOR, LTD
To: ATRIA TECHNOLOGIES INC.
Reel/Frame 048058/0864 →